1) plasma etching
等离子蚀刻
1.
At the present time,there are processes of punching,numerical control milling,chemical etching and plasma etching to open windows on the PI substrate.
目前采用的在基材上开窗口的方法有机械冲切、数控铣、化学试剂蚀刻法和等离子蚀刻法等。
2) Plasma Etching
等离子刻蚀
1.
Research on array carbon nanotubes film without substrate by centrifugal infiltration and plasma etching
离心渗透等离子刻蚀法制备无基底阵列式碳纳米管复合膜
2.
The methods for making carbon nanotubes(CNTs)/ polymer composite films by plasma etching are researched.
本文研究了等离子刻蚀碳纳米管(CNTs)聚合物复合膜的工艺,并采用测量接触电阻表征薄膜的刻蚀效果。
3) plasma etching
等离子体刻蚀
1.
Effects of plasma etching on Nafion~ membrane performances;
等离子体刻蚀对Nafion~膜性能的影响
2.
Application of Emission Spectrometry in Trace Fluorine Analysis of Flue Gas from Plasma Etching;
发射光谱法在等离子体刻蚀废气微量F元素检测中的应用研究
3.
Study of the ECR plasma etching process of PZT ferroelectric thin film materials;
PZT铁电薄膜材料的ECR等离子体刻蚀研究
4) plasma etch
等离子体刻蚀
1.
Silicon-micro-accelerometer is fabricated by plasma etch technology.
采用等离子体刻蚀技术制作成硅微加速度计。
5) Plasma etching apparatus
等离子刻蚀设备
6) plasma etch
等离子体蚀刻
1.
Improve diffraction efficiency of relief holographic gratings by plasma etch;
用等离子体蚀刻法提高浮雕全息光栅的衍射效率
2.
The plasma etch theory on oxide and polysilicon in microelectronics manufacturing has been investigated.
等离子体蚀刻硅深沟道用作存贮器件的储存电容有非常重要的作用,就等离子体在微电子制造领域中蚀刻二氧化硅,多晶硅的原理和如何控制形状(profile)和深沟道的深度做了研究,解释了HBr,NF3,He_30%O2气体,压力对蚀刻速率,Si/SiO2蚀刻选择比的影响。
补充资料：刻刻
1.每时每刻。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条