1) UV-photolithography
紫外光刻法
1.
The patterned anodic aluminum oxide (AAO) template was fabricated by UV-photolithography.
采用紫外光刻法制得图案化的阳极氧化铝模板。
2) UV-lithography
紫外光刻
1.
CaF2 crystal with broad wavelength range and high transmittance has become the focus of the semiconductor industry with the development of UV-lithography.
随着深紫外光刻技术的发展,透光范围宽、透过率高的CaF_2晶体成了人们关注的焦点,其尺寸和质量得到了不断的提高。
2.
A UV-exposure model and a dimensional tolerance model based on Fresnel diffraction theory are established by considering the impact of the refractive index and absorption coefficient of SU-8 photoresist on dimensional precision of UV-lithography.
在考虑了SU-8的吸收系数和折射系数对紫外光刻尺寸精度影响的基础上,根据菲涅耳衍射理论建立了紫外曝光改进模型和尺寸公差模型,对SU-8微结构的尺寸及其公差进行数值模拟。
3.
The deep UV-lithography is one of the main processing technique of high aspect ratio microstructure fabrication.
UV-LIGA技术是制作大高宽比微电子机械(MEMS)的方法之一,而UV-LIGA技术的关键工艺之一为深度紫外光刻。
3) UV lithography
紫外光刻
1.
The pattern transfer accuracy of deep UV lithography is investigated.
由于紫外光衍射效应比较大 ,通过紫外光刻获得高精度的大高度微结构并不容易。
2.
To study the relationship between the shape errors of photo-resist model based on UV lithography and processing parameters,the orthogonal experimentation was employed to design and organize the experiment for positive photo-resist AZ9260.
为研究基于紫外光刻加工技术的光刻胶模型形状误差与工艺参数的关系,利用正交实验法对正性光刻胶AZ9260进行了实验研究。
4) EUVL
极紫外光刻
1.
Extreme ultraviolet lithography(EUVL) is one of all candidate next-generation lithography technologies targeting 45 nm features,the industrial throughput should be more than 80 wafers-per-hour.
极紫外光刻(EUVL)技术是实现45 nm特征尺寸的候选技术之一,产业化设备要求300 mm硅片的产率大于每小时80片(80 wafer/h),此时入射到掩模版上的极紫外光功率密度很高,掩模版上的吸收层和Mo/Si多层膜将分别吸收100%和35%的入射光能量,从而导致其热变形,引起光刻性能下降,因此必须分析和控制掩模热变形。
2.
The status of extreme ultraviolet lithography (EUVL),as the technology for nextgeneration lithography (NGL), in a rapidly developing stage is analyzed.
分析了极紫外光刻技术作为下一代光刻技术的首选技术目前飞速发展阶段的状况,表明欧、美、日、俄等国家和地区在该领域集中了大量的人力、物力的目标是将光刻精度提高到50nm。
3.
The typical NGL technologies, like immersion ArF lithography, extreme ultraviolet lithography (EUVL) and electron beam Projection lithography (EPL), are compared.
通过比较几种具有较大潜力的NGL(浸没式ArF光刻机、极紫外光刻和电子束曝光 )的特点、开发现状和有待解决的关键技术 ,预言将来可能是以极紫外光刻、电子束曝光和某种常规光刻机结合的方式来实现工业、前沿科学技术需要的各种微米 /纳米级图形的制备。
5) DUV lithography
远紫外光刻
补充资料：刻法
1.苛刻的法律。 2.雕﹑刻的技法。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条