1) proximity UV-lithography
接近式紫外光刻
1.
Theoretical Analysis and Pre-compensation Simulation of Pattern Distortion in Proximity UV-lithography;
接近式紫外光刻中图形失真的分析与预修正仿真
2.
To give an error analysis of this effect,the propagation of partial coherent light in the proximity UV-lithography was investigated and the relative theoretical model was proposed.
为此,研究了接近式紫外光刻中部分相干光的传播过程,建立了相应的光刻理论模型,对光刻成像中的误差产生机理进行分析。
3.
The light source of proximity uv-lithography is extended incoherent quasi-monochronmatic.
基于Hopkins公式,研究了接近式紫外光刻中扩展准单色光源经柯勒照明系统传播到掩模表面上任两点的复相干度,并建立相应的基于部分相干光理论的光刻模型。
2) proximity lithography
接近式光刻
1.
Computer simulation of diffraction intensity in proximity lithography;
接近式光刻衍射光场的快速计算机模拟
2.
The light density on the wafer mainly depends on the diffraction produced by the gap between the mask and the wafer in proximity lithography.
在接近式光刻中,衬底上的光强分布主要是受掩模与衬底间的间隙引起的衍射影响。
4) UV-lithography
紫外光刻
1.
CaF2 crystal with broad wavelength range and high transmittance has become the focus of the semiconductor industry with the development of UV-lithography.
随着深紫外光刻技术的发展,透光范围宽、透过率高的CaF_2晶体成了人们关注的焦点,其尺寸和质量得到了不断的提高。
2.
A UV-exposure model and a dimensional tolerance model based on Fresnel diffraction theory are established by considering the impact of the refractive index and absorption coefficient of SU-8 photoresist on dimensional precision of UV-lithography.
在考虑了SU-8的吸收系数和折射系数对紫外光刻尺寸精度影响的基础上,根据菲涅耳衍射理论建立了紫外曝光改进模型和尺寸公差模型,对SU-8微结构的尺寸及其公差进行数值模拟。
3.
The deep UV-lithography is one of the main processing technique of high aspect ratio microstructure fabrication.
UV-LIGA技术是制作大高宽比微电子机械(MEMS)的方法之一,而UV-LIGA技术的关键工艺之一为深度紫外光刻。
5) UV lithography
紫外光刻
1.
The pattern transfer accuracy of deep UV lithography is investigated.
由于紫外光衍射效应比较大 ,通过紫外光刻获得高精度的大高度微结构并不容易。
2.
To study the relationship between the shape errors of photo-resist model based on UV lithography and processing parameters,the orthogonal experimentation was employed to design and organize the experiment for positive photo-resist AZ9260.
为研究基于紫外光刻加工技术的光刻胶模型形状误差与工艺参数的关系,利用正交实验法对正性光刻胶AZ9260进行了实验研究。
6) Proximity aligner
接近式光刻机
补充资料：紫外光刻胶
分子式：
CAS号：
性质：用紫外光作曝光光源的光刻胶。一般是指分光感度波长为300～450nm的近紫外抗蚀剂。紫外光刻胶有负性、正性和正-负性两用三类。负性的代表品种是聚乙烯醇肉桂酸酯、环化橡胶系抗蚀剂，正性代表品种是重氮萘醌系抗蚀剂，正负性抗蚀剂是为了兼顾其既有正性又有负性的性能，往往会给全面照顾抗蚀剂应用上带来一些难题，目前尚未商品化。
CAS号：
性质：用紫外光作曝光光源的光刻胶。一般是指分光感度波长为300～450nm的近紫外抗蚀剂。紫外光刻胶有负性、正性和正-负性两用三类。负性的代表品种是聚乙烯醇肉桂酸酯、环化橡胶系抗蚀剂，正性代表品种是重氮萘醌系抗蚀剂，正负性抗蚀剂是为了兼顾其既有正性又有负性的性能，往往会给全面照顾抗蚀剂应用上带来一些难题，目前尚未商品化。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条