The influences of sputtering power and hydrogen partial pressure on the structure of Si∶H films prepared by RF sputtering on single crystal silicon substrate were studied by means of SEM and Raman spectra.

Hydrogenated silicon film attracts extensively attention due to its application on many kinds of microelectronic devices, such as infrared imaging system, solar cell and thin film transistor.

Preparation and characterization of hydrogenated microcrystalline silicon films by HW-MWECR-CVD;

Analysis of IR transmission spectra and hypothesis of bond-centered H diffusion in a-Si∶H thin films during light-induced thermal annealing;