1) silicon films
硅薄膜
1.
By Raman spectroscopy, high resolution electron microscope and atomic force microscope, the structure of phosphorus doped hydrogenated nano crystalline silicon films (nc Si (P)∶H) was analyzed The films possess orderly arranged cluster feature in the size of 15～20?nm.
采用喇曼 (Raman)散射谱、高分辨率电子显微镜 (HRTEM)和原子力显微镜 (AFM)对掺磷纳米硅薄膜的微结构进行了分析 ,并对纳米硅薄膜的传导机制进行了探讨 。
2.
The effects of a showerhead electrode and longitudinal flow electrode on the growth of silicon films in a PECVD system are studied.
在制备硅薄膜材料的PECVD系统中,分别采用普通平行板电极和网状电极,在相同的工艺条件下研究了电极结构对硅薄膜材料均匀性、电学性能以及微结构的影响。
3.
Silicon films have been prepared with silane (SiH_4) as the source gas by atmosphere pressure chemical vapor deposition (APCVD) on moving glass substrates under the conditions simulating technical process on float glass.
本文介绍了硅薄膜的发展状况、结构特点、性质以及应用,详细阐述了硅薄膜制备技术——化学气相沉积(CVD)方法的原理、特点和用途等,并简要概述镀膜玻璃的节能性能表征。
2) silicon film
硅薄膜
1.
Fabrication and structure research of silicon films prepared by RF magnetron sputtering
射频磁控溅射硅薄膜的制备与结构研究
2.
The amorphous silicon films were prepared by atmospheric pressure chemical vapor deposition (APCVD) on a moving substrate from a gas mixture of silane and ethylene at 620℃ .
采用APCVD工艺用硅烷和乙烯为原料在620℃沉积硅薄膜。
3.
The study of making silicon film on trenched silicon substrate is done for the silicon MEMS movability parts, a efficacious method is gained for making silicon film on trenched silicon substrate, the film uniformity is±0.
对硅基MEMS的可动部件很多都是采用在带图形的硅衬底上制备的硅薄膜通过深槽腐蚀释放获得的特点,开展在带图形的硅衬底上制备硅薄膜技术研究,得到一种通过两次硅硅键合、减薄抛光、一次湿法腐蚀硅相结合的在带图形的硅衬底上制备硅薄膜的有效方法,该方法制备出了的薄膜厚度为10μm,均匀性为±0。
3) silicon thin films
硅薄膜
1.
The grain sizes of the resulting silicon thin films were studied by using XRD and Raman measurement.
利用等离子体增强(PECVD)法和快速热处理(RTP)法分别在玻璃衬底上制备了硅薄膜。
2.
A numerical model which is based on the hyperbolic two-step model is developed to investigate the microscopic energy transport in silicon thin films during ultra-fast laser heating.
在双曲双步输运模型基础上建立数值模型,针对超短脉冲激光作用下硅薄膜的微观能量输运过程展开理论研究。
3.
The microstructure of silicon thin films fabricated at low temperature by plasma enhanced chemical vapor deposition(PECVD) using H2/SiH4 has been studied by Raman scattering.
用Raman散射谱研究了以SiH4/H2为气源,用等离子体增强化学气相沉积技术,低温制备的一系列硅薄膜的微结构特征。
4) silicon thin film
硅薄膜
1.
Stability of mixed phase silicon thin film material under light soaking;
相变域硅薄膜材料的光稳定性
2.
Different structural silicon thin films deposited by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) were studied at the use of purifier or not.
本文采用VHF PECVD技术制备了不同结构的硅薄膜 ,分析研究了有、无纯化器对制备薄膜特性的影响。
3.
Through scanning electronic microscopy(SEM) measurement,the morphologies of silicon thin film were investigated.
用射频等离子体增强化学气相沉积(RF-PECVD)系统在普通玻璃衬底上制备了氢化非晶硅薄膜(a-Si∶H),用改进的快速光热退火炉(RTP)对薄膜进行了低温下的退火处理。
5) silicon membrane
硅薄膜
1.
Two kinds of sensors were designed: silicon membrane wind speed and direction sensor,and silicon cantilever wind speed and direction sensor.
设计了两种基于MEMS工艺的固态测风传感器,即硅薄膜式测风传感器和硅悬梁式测风传感器,用流体力学原理对这两种风速风向传感器进行了理论分析及ANSYS CFD软件模拟仿真,得出了风速与挠度、剪切力的关系。
2.
Two kinds of sensors were designed:silicon membrane wind speed and direction sensor,and silicon cantilever wind speed and direction sensor.
设计了两种基于 MEMS 工艺的固态测风传感器,即硅薄膜式测风传感器和硅悬梁式测风传感器,用流体力学原理对这两种风速风向传感器进行了理论分析及 ANSYS CFD 软件模拟仿真,得出了风速与挠度、剪切力的关系。
6) Co-Si thin films
钴硅薄膜
补充资料：一氧化硅薄膜介质材料
分子式：
CAS号：
性质：黑褐色无定型固体膜。介电常数5。比(电)容40～100pF/mm2，电容温度系数(40～400) ×10-6，介质损耗因数tgδ(1～4) ×10-2，击穿场强1×108V/m。与基片附着性能良好。采用真空蒸发法制取。用在混合集成电路中。用于制作薄膜电容器介质、薄膜电阻器和隔离层、光电池用增透膜。
CAS号：
性质：黑褐色无定型固体膜。介电常数5。比(电)容40～100pF/mm2，电容温度系数(40～400) ×10-6，介质损耗因数tgδ(1～4) ×10-2，击穿场强1×108V/m。与基片附着性能良好。采用真空蒸发法制取。用在混合集成电路中。用于制作薄膜电容器介质、薄膜电阻器和隔离层、光电池用增透膜。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条