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1)  InAs/GaAs surface QDs
InAs/GaAs表面量子点
2)  InAs/GaAs self-assembled quantum dots
InAs/GaAs量子点
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3)  InAs/GaAs self organized quantum dots
InAs/GaAs自组织量子点
4)  InAs/GaAs quantum dot laser
InAs/GaAs量子点激光器
1.
Characteristic study of maximum modal gain of p-doped 1.3μm InAs/GaAs quantum dot lasers
p型掺杂1.3μm InAs/GaAs量子点激光器的最大模式增益特性的研究
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5)  InAs quantum dots
InAs量子点
1.
InAs quantum dots(QDs) have been grown on the GaAs(001)substrates by the method of molecular beam epitaxy.
用分子束外延系统在GaAs(001)衬底上生长InAs量子点,在InAs量子点上插入3 nm的In0。
2.
Single-and Multi-layer InAs quantum dots grown on (001) GaAs substrates by molecular beam epitaxy (MBE) were studied by transmission electron diffraction (TEM) and the structural properties of the quantum dots were discussed.
报道了利用分子束外延技术在（001）GaAs衬底上生长的单层及多层InAs量子点材料的透射电子显微镜（TEM）研究结果，并对量子点的结构特性进行了讨论。
3.
InAs quantum dots(QDs) with different cap layers were fabricated by molecule beam epitaxy(MBE) system.
采用变温及时间分辨光致发光谱研究了MBE设备生长的具有不同盖帽层的InAs量子点样品。
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6)  multilayer InAs quantum dots
多层InAs量子点
补充资料：单量子阱(见量子阱)


单量子阱(见量子阱)
single quantum well

单且子阱sillgle quantum well见量子阱。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
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