1.
Characteristic study of maximum modal gain of p-doped 1.3μm InAs/GaAs quantum dot lasers
p型掺杂1.3μm InAs/GaAs量子点激光器的最大模式增益特性的研究
2.
Effects of the thickness of spacing layer and capping layer on the strain distribution and wavelength emission of InAs/GaAs quantum dot
隔离层厚度和盖层厚度对InAs/GaAs量子点应变分布和发射波长的影响
3.
Study of InAs/GaAs Quantum Dots
InAs/GaAs系列量子点研究
4.
Electron-and Hole-spin Relaxations in InAs/GaAs Single Quantum Dots
InAs/GaAs单量子点中电子/空穴自旋弛豫
5.
Growth of MBE InAs/GaAs(001) QuantumDots by the Rapid Rate
快速率生长MBE InAs/GaAs(001)量子点
6.
Effect of the GaAs/GaSb combination strain-buffer layer on self-assembled InAs quantum dots
GaSb/GaAs复合应力缓冲层上自组装InAs量子点的生长
7.
Theoretical Study of Strain Distribution and Electronic Structure of InAs/GaAs Self-Assembled Quantum Dots;
InAs/GaAs自组装量子点的应变分布和电子结构的理论研究
8.
The Study of Optical Properties on InAs Self-organized Quantum Dots;
InAs自组织量子点的光学性质研究
9.
Study of InAs Quantum-dot Materials and Devices Grown by GSMBE;
GSMBE生长的InAs量子点材料与器件研究
10.
Studies of Growth and Luminescent Properties in Self-organized InAs Quantum Dots;
自组织InAs量子点材料生长与发光性质的研究
11.
InAs Quantum Dots with InGaAs Caplayer Infrared Detector Grown by MBE
带有InGaAs覆盖层的InAs量子点红外探测器材料的发光与光电响应
12.
Symmetry Constraints of the Magic Angular Momentums and the Electronic Structures of GaAs Quantum Dot
GaAs量子点中电子结构和幻角动量的对称性分析
13.
Electronic Structures of InAs/InP Rectangular Quantum Wire
磁场下InAs/InP矩形量子线中的电子结构
14.
SHORT PERIOD InAs/GaSb SUPERLATTICE INFRARED DETECTOR ON GaAs SUBSTRATES
GaAs基短周期InAs/GaSb超晶格红外探测器研究
15.
Study on InGaAs/GaAs Strained Quantum well Lasers;
InGaAs/GaAs应变量子阱半导体激光器的研究
16.
Study on Irradiation Effects of GaAs/AlGaAs Multiple Quantum Wells;
GaAs/AlGaAs多量子阱材料的辐照效应研究
17.
Electronic Transport Properties in Quantum Wires Made up of GaAs and AlGaAs
GaAs与AlGaAs构成的量子线中的电子输运特性
18.
Characterization and Growth of 1.2μm Highly Strained InGaAs/GaAs Quantum Well;
1.2μm InGaAs/GaAs高应变量子阱材料的生长及特性研究