1.
Characteristic study of maximum modal gain of p-doped 1.3μm InAs/GaAs quantum dot lasers
p型掺杂1.3μm InAs/GaAs量子点激光器的最大模式增益特性的研究
2.
Study of InAs/GaAs Quantum Dots
InAs/GaAs系列量子点研究
3.
Electron-and Hole-spin Relaxations in InAs/GaAs Single Quantum Dots
InAs/GaAs单量子点中电子/空穴自旋弛豫
4.
Growth of MBE InAs/GaAs(001) QuantumDots by the Rapid Rate
快速率生长MBE InAs/GaAs(001)量子点
5.
Effect of the GaAs/GaSb combination strain-buffer layer on self-assembled InAs quantum dots
GaSb/GaAs复合应力缓冲层上自组装InAs量子点的生长
6.
Study on InGaAs/GaAs Strained Quantum well Lasers;
InGaAs/GaAs应变量子阱半导体激光器的研究
7.
Theoretical Study of Strain Distribution and Electronic Structure of InAs/GaAs Self-Assembled Quantum Dots;
InAs/GaAs自组装量子点的应变分布和电子结构的理论研究
8.
Effects of the thickness of spacing layer and capping layer on the strain distribution and wavelength emission of InAs/GaAs quantum dot
隔离层厚度和盖层厚度对InAs/GaAs量子点应变分布和发射波长的影响
9.
InAs Quantum Dots with InGaAs Caplayer Infrared Detector Grown by MBE
带有InGaAs覆盖层的InAs量子点红外探测器材料的发光与光电响应
10.
The Study of Optical Properties on InAs Self-organized Quantum Dots;
InAs自组织量子点的光学性质研究
11.
Study of InAs Quantum-dot Materials and Devices Grown by GSMBE;
GSMBE生长的InAs量子点材料与器件研究
12.
Studies of Growth and Luminescent Properties in Self-organized InAs Quantum Dots;
自组织InAs量子点材料生长与发光性质的研究
13.
Structure, Process and Measurement of Ohmic Contact for MBE GaAs Quantum Cascade Laser;
用于GaAs基量子级联激光器的欧姆接触新结构、工艺与测量
14.
Multi-quantum-well InGaNAs/GaAs one mirror inclined three-mirror cavity photodetector operating at 1.3 μm
1.3μm InGaNAs/GaAs多量子阱“一镜斜置三镜腔”光探测器
15.
Laser Strained Self-Organized Quantum Dot Materials and Quantum Dot
应变自组装量子点材料与量子点激光器
16.
SHORT PERIOD InAs/GaSb SUPERLATTICE INFRARED DETECTOR ON GaAs SUBSTRATES
GaAs基短周期InAs/GaSb超晶格红外探测器研究
17.
10Gb/s GaAs/SiGe Laser Diode Driver IC;
10Gb/s GaAs/SiGe激光驱动器设计
18.
Study on the Optimization of Parameters of Double Q-switched Lasers with AO(EO) and a GaAs Saturable Absorber
声光（电光）-GaAs双调Q激光器性能参数优化的研究