1) InAs self-organized quantum dots (wires)
InAs自组织量子点(线)
3) self-organized InAs quantum dots
自组织生长InAs量子点
4) InAs/GaAs self organized quantum dots
InAs/GaAs自组织量子点
5) InAs quantum dots
InAs量子点
1.
InAs quantum dots(QDs) have been grown on the GaAs(001)substrates by the method of molecular beam epitaxy.
用分子束外延系统在GaAs(001)衬底上生长InAs量子点,在InAs量子点上插入3 nm的In0。
2.
Single-and Multi-layer InAs quantum dots grown on (001) GaAs substrates by molecular beam epitaxy (MBE) were studied by transmission electron diffraction (TEM) and the structural properties of the quantum dots were discussed.
报道了利用分子束外延技术在（001）GaAs衬底上生长的单层及多层InAs量子点材料的透射电子显微镜（TEM）研究结果，并对量子点的结构特性进行了讨论。
3.
InAs quantum dots(QDs) with different cap layers were fabricated by molecule beam epitaxy(MBE) system.
采用变温及时间分辨光致发光谱研究了MBE设备生长的具有不同盖帽层的InAs量子点样品。
补充资料：X线量子噪声
X线量子噪声
影像学术语。X线量子依泊松(Polsson)分布的统计学法则随机产生的空间波动。噪声量与X线检测器检测到的X线量成反比。因此，相应地与入射的X线量成反比。即是说，入射的(检测到的)X线量越大，X线量子噪声越小。噪声量通常以均值平方根(root mean square，RMS)表示。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条