1) InAs/GaAs submonolayer
InAs/GaAs亚单层
2) InAs submonolayer
InAs亚单层
4) InAs/GaAs surface QDs
InAs/GaAs表面量子点
5) InAs/GaAs self organized quantum dots
InAs/GaAs自组织量子点
6) InAs/GaAs quantum dot laser
InAs/GaAs量子点激光器
1.
Characteristic study of maximum modal gain of p-doped 1.3μm InAs/GaAs quantum dot lasers
p型掺杂1.3μm InAs/GaAs量子点激光器的最大模式增益特性的研究
补充资料：亚磷酸单异癸基单苯基酯
CAS：68311-09-1
分子式：C16H27O3P
中文名称：亚磷酸单异癸基单苯基酯；亚磷酸苯基异癸基酯
英文名称：Phosphonic acid, isodecyl phenyl ester；phosphorous acid, monoisodecyl monophenyl ester；Phosphonic acid,isodecyl phenyl ester
分子式：C16H27O3P
中文名称：亚磷酸单异癸基单苯基酯；亚磷酸苯基异癸基酯
英文名称：Phosphonic acid, isodecyl phenyl ester；phosphorous acid, monoisodecyl monophenyl ester；Phosphonic acid,isodecyl phenyl ester
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条