1.
Study of InAs Quantum-dot Materials and Devices Grown by GSMBE;
GSMBE生长的InAs量子点材料与器件研究
2.
Studies of Growth and Luminescent Properties in Self-organized InAs Quantum Dots;
自组织InAs量子点材料生长与发光性质的研究
3.
Effect of the GaAs/GaSb combination strain-buffer layer on self-assembled InAs quantum dots
GaSb/GaAs复合应力缓冲层上自组装InAs量子点的生长
4.
InAs Quantum Dots with InGaAs Caplayer Infrared Detector Grown by MBE
带有InGaAs覆盖层的InAs量子点红外探测器材料的发光与光电响应
5.
Study of InAs/GaAs Quantum Dots
InAs/GaAs系列量子点研究
6.
Electron-and Hole-spin Relaxations in InAs/GaAs Single Quantum Dots
InAs/GaAs单量子点中电子/空穴自旋弛豫
7.
The Study of Optical Properties on InAs Self-organized Quantum Dots;
InAs自组织量子点的光学性质研究
8.
Growth of MBE InAs/GaAs(001) QuantumDots by the Rapid Rate
快速率生长MBE InAs/GaAs(001)量子点
9.
Theoretical Study of Strain Distribution and Electronic Structure of InAs/GaAs Self-Assembled Quantum Dots;
InAs/GaAs自组装量子点的应变分布和电子结构的理论研究
10.
Characteristic study of maximum modal gain of p-doped 1.3μm InAs/GaAs quantum dot lasers
p型掺杂1.3μm InAs/GaAs量子点激光器的最大模式增益特性的研究
11.
Effects of the thickness of spacing layer and capping layer on the strain distribution and wavelength emission of InAs/GaAs quantum dot
隔离层厚度和盖层厚度对InAs/GaAs量子点应变分布和发射波长的影响
12.
Electronic Structures of InAs/InP Rectangular Quantum Wire
磁场下InAs/InP矩形量子线中的电子结构
13.
Effect of the LP-MOCVD Growth Parameters For Type-Ⅱ InAs/GaSb Superlattices Surface Morphology
低压MOCVD生长参量对Ⅱ型InAs/GaSb超晶格材料表面形貌的影响
14.
Spin-Dephasing on Quantum Dot System with a Nearby Quantum Point Contact
量子点接触测量对量子点系统退相干的影响
15.
lowering of freezing point
冰点下降（测分子量用）
16.
In(Ga)As Quantum-Dot Infrared Photodetectors
In(Ga)As量子点红外探测器
17.
Study of Energy and Electronic Properties in Semiconductor Quantum Dots;
导体量子点中电子能量和性质的研究
18.
Atomistic Simulations of Elastic Moduli in GaN Quantum Dots
GaN量子点弹性模量的分子动力学模拟