1)  gated diode
SOI NMOSFET
2)  SOI NMOSFET s
SOI NMOSFET s
1.
Channel Hot-Carriers Induced Degradation Behavior in SOI NMOSFET s;
沟道热载流子导致的SOI NMOSFET s的退化特性
3)  PD SOI NMOSFET
PD SOI NMOSFET
1.
An Analytical Temperature0Dependent Kink Effect Model of PD SOI NMOSFET;
PD SOI NMOSFET翘曲效应的温度模型
4)  nMOSFET
nMOSFET
1.
A High Performance 0.18μm RF nMOSFET with 53GHz Cutoff Frequency;
截止频率53GHz的高性能0 .18μm射频nMOSFET(英文)
2.
Effects of the technology of implanting nitrogen into buried oxide layer on the characteristics of partially depleted SOI nMOSFET;
埋氧层注氮工艺对部分耗尽SOI nMOSFET特性的影响
3.
ESD protection design for multi-finger nMOSFET;
多指条nMOSFET抗ESD设计技术
5)  NMOSFET's
NMOSFET's
1.
Study on Pulse Stress Enhanced Hot-Carrier Effects in NMOSFET′s;
脉冲应力增强的NMOSFET′s热载流子效应研究
6)  SOI
SOI
1.
Study of the Single-Event Effect of SOI NMOSFET by 3-D Simulation;
SOI NMOSFET单粒子效应的3-D模拟
2.
The Design of Three-Axis Accelerometer Based on SOI;
基于SOI的三轴压阻微加速度计的设计
3.
Simulation experiment of tolerance of irradiation about domestic SOI 1750A microprocessor;
国产SOI 1750A微处理器抗辐射效应模拟试验
参考词条
补充资料:Au-Pd-Cr-Pt-Fe-Al-Y alloys
分子式:
CAS号:

性质:金基与钯、铬、铂、铁、铝和钇的多元合金,电阻系数最高。生产方法参见金钯铬合金。可用作高温应变材料。

说明:补充资料仅用于学习参考,请勿用于其它任何用途。