1) PD SOI
PD SOI
2) PD SOI NMOSFET
PD SOI NMOSFET
1.
An Analytical Temperature0Dependent Kink Effect Model of PD SOI NMOSFET;
PD SOI NMOSFET翘曲效应的温度模型
3) SOI
SOI
1.
Study of the Single-Event Effect of SOI NMOSFET by 3-D Simulation;
SOI NMOSFET单粒子效应的3-D模拟
2.
The Design of Three-Axis Accelerometer Based on SOI;
基于SOI的三轴压阻微加速度计的设计
3.
Simulation experiment of tolerance of irradiation about domestic SOI 1750A microprocessor;
国产SOI 1750A微处理器抗辐射效应模拟试验
4) Silicon on insulator
SOI
1.
An ultracompact 3 dB coupler is designed and fabricated in silicon on insulator,based on 1×2 line tapered multimode interference (MMI) coupler.
采用线锥形结构 ,在 silicon- on- insulator(SOI)材料上设计并实现了一种新的紧缩型 3- d B多模干涉耦合器(MMI) 。
2.
A 4×4 area modulation silicon on insulator (SOI) multimode interference coupler optical switch, composed of four cascaded 2×2 area modulation optical switches, has been designed.
根据区域调制多模干涉耦合器光开关的工作原理 ,以 2× 2区域调制多模干涉光开关为基础 ,采用级联的方式设计了 4× 4区域调制多模干涉SOI光波导开关。
3.
Silicon on insulator(SOI) structure, as a very large scale integrated circuit(VLSI) wafer, has attractive features such as radiationhardening, no parasitic capacitance and latchup effect.
绝缘体上生长的薄单晶硅膜 (SOI)具有良好的横向绝缘、抗辐照、无锁存效应和无寄生电容 ,并能有效地提高硅集成电路的速度和集成度 ,在深亚微米 VL SI技术中 ,具有很大的优势和潜力。
5) Pd
Pd
1.
Synthesis of N-Hydroxyalkyl-substituted Bisimidazolium Chloride Salt and the Catalytic Activity of Its Pd-complex for Suzuki-Miyaura Cross-coupling Reaction;
含羟基手臂双咪唑鎓氯盐的合成及其Pd络合物对Suzuki-Miyaura交叉偶联反应的催化活性
2.
The Interaction between Pd and CeO_2(111) surface: A first-principle study;
Pd与CeO_2(111)面的相互作用的第一性原理研究
3.
Effect of Pt,Pd on the Properties of Co-B/γ-Al_2O_3 Alloy Catalysts for Thiophene Hydrodesulfu-rization;
Pt、Pd对Co-B/γ-Al_2O_3催化噻吩加氢脱硫性能的影响
6) Palladium
Pd
1.
Autocatalytic Electroless Deposition of Palladium onto p-Silicon (100);
Pd在p型单晶硅(100)表面自催化化学沉积(英文)
2.
Abstraction of Gold,Platinum and Palladium from Platinum and Palladium Concentrate;
从铂钯精矿中提取Au、Pt、Pd
3.
Separation and Extraction of Platinum and Palladium from the Furnace Ash;
从炉灰中回收和提纯Pt、Pd
参考词条
SOI CMOS
SOI MOSFETs
SOI LDMOS
SiGe/SOI
SRAM/SOI
SOI-LDMOS
SDB/SOI
SOI/SiGeOI
Si1-xGex/SOI
MOSFET/SOI
SOI/CMOS
CMOS/SOI
SOI NMOSFET
SOS/SOI
SOI PICs
多相位矩阵
补充资料:Au-Pd-Cr-Pt-Fe-Al-Y alloys
分子式:
CAS号:
性质:金基与钯、铬、铂、铁、铝和钇的多元合金,电阻系数最高。生产方法参见金钯铬合金。可用作高温应变材料。
CAS号:
性质:金基与钯、铬、铂、铁、铝和钇的多元合金,电阻系数最高。生产方法参见金钯铬合金。可用作高温应变材料。
说明:补充资料仅用于学习参考,请勿用于其它任何用途。