1)  GaAs PHEMT
GaAs PHEMT
1.
A 10Gb/s GaAs PHEMT High Gain Preamplifier for Optical Receivers;
10Gb/s GaAs PHEMT高增益光接收机前置放大器(英文)
2.
10Gb/s GaAs PHEMT Current Mode Transimpedance Preamplifier for Optical Receiver;
10Gb/s GaAs PHEMT电流模跨阻抗光接收机前置放大器(英文)
2)  switching GaAs PHEMT
GaAs PHEMT开关
1.
The modeling of switching GaAs PHEMT was introduced, and the modeling method by using the microwave circuit design software named ADS was discussed, and the model parameters and the curve of both simulated and measured results were presented.
论述了GaAs PHEMT开关器件的建模,介绍了利用微波电路设计软件ADS建立GaAs PHEMT 开关模型的方法,给出了模型模拟与器件测量的曲线和模型参数。
3)  GaAs PHEMT technology
GaAs PHEMT工艺
4)  PHEMT
PHEMT
1.
Design of wideband current-mode PHEMT preamplifier;
宽带电流模形式PHEMT前置放大器设计
2.
The Analysis of Evaluation Methods in GaAs PHEMT Devices Reliability;
GaAs PHEMT器件的可靠性评估方法研究
3.
The Co-evaporation Technology of Ohmic Contact in GaAs PHEMT;
PHEMT欧姆接触的双源共蒸技术
5)  GaAs
GaAs
1.
Synthesis of nano-sized CeO_2 via alcohol-water method and its polishing performance on GaAs wafer;
纳米CeO_2的醇水法制备及其对GaAs晶片的抛光性能
2.
Ordered SiO_2 Colloidal Crystals Grown on GaAs Substrates;
垂直沉积法在GaAs衬底上制备有序SiO_2胶体晶体
3.
Indentation Induced Dislocations in GaAs Single Crystal;
压痕诱发GaAs单晶中的位错组态
6)  InP PHEMT
InP PHEMT
参考词条
补充资料：GaAs epitaxial wafer
分子式：
CAS号：

性质：在特定晶向[(100)或(100)偏向最近<110>2 ～5 的晶面]砷化镓衬底上外延生长的单晶薄层材料外延工艺有LPE、VPE、MOCVD、MBE、CBE、ALE等工业选择取决于器件结构等因素，一般LPE、VPE多用于商品化器件，如光探测器、霍尔器件等。MBE、CBE、ALE多用于最子阱超晶格材料。MOCVD两方面兼而有之。

说明：补充资料仅用于学习参考，请勿用于其它任何用途。