1)  GaAs/AlAs
GaAs/AlAs
1.
Fabrication Technology of a Novel Hydrophone Based on GaAs/AlAs Etch-Stop;
基于GaAs/AlAs腐蚀自停止的新型水听器工艺
2.
Selective Dry Etching of GaAs/AlAs Based on SiCl_4/SF_6 Mixtures by ICP;
基于SiCl_4/SF_6的GaAs/AlAs ICP选择性干法刻蚀
3.
Γ X MIXING IN GaAs/AlAs DOUBLE BARRIER STRUCTURES STUDIED BY MAGNETO TUNNELING OSCILLATIONS;
磁隧穿振荡研究GaAs／AlAs双势垒结构中的Γ-X电子态混合
2)  GaAs/AlAs/GaAs
GaAs/AlAs/GaAs
1.
Microstructure of GaAs/AlAs/GaAs with and without oxidation;
GaAs/AlAs/GaAs氧化前后的微结构表征
3)  GaAs/AlAs superlattices
GaAs/AlAs超晶格
4)  GaAs/AlAs heterojunction
GaAs/AlAs异质结
1.
GaAs/AlAs heterojunction has been widely used in practice for various devices.
利用深能级瞬态谱(DLTS)技术研究了Si夹层和GaAs层不同生长温度对GaAs／AlAs异质结晶体 品质的影响。
5)  GaAs/AlAs multiple quantum wells
GaAs/AlAs多量子阱
1.
A series of Be delta-doped GaAs/AlAs multiple quantum wells with the doping at the well center were grown on a semi-insulating (100) GaAs substrate .
从实验和理论上,研究了量子限制效应对GaAs/AlAs多量子阱中受主对重空穴束缚能的影响。
2.
A series of Be delta-doped GaAs/AlAs multiple quantum wells with the doping at the well center are grown by molecular beam epitaxy.
从实验和理论上,研究了量子限制效应对限制在GaAs/AlAs多量子阱中受主对重空穴束缚能的影响。
补充资料：GaAs epitaxial wafer
分子式：
CAS号：

性质：在特定晶向[(100)或(100)偏向最近<110>2 ～5 的晶面]砷化镓衬底上外延生长的单晶薄层材料外延工艺有LPE、VPE、MOCVD、MBE、CBE、ALE等工业选择取决于器件结构等因素，一般LPE、VPE多用于商品化器件，如光探测器、霍尔器件等。MBE、CBE、ALE多用于最子阱超晶格材料。MOCVD两方面兼而有之。

说明：补充资料仅用于学习参考，请勿用于其它任何用途。