1) single crystal silicon substrate
单晶硅基片
2) silicon wafer
单晶硅片
1.
The contact stiffness,hardness and elastic modulus of silicon wafers were continuously measured during the loading por- tion of an indentation test by a nanoindenter apparatus with the continuous stiffness measurement technique.
利用纳米压痕仪通过连续刚度测量法对单晶硅片在压入过程中的接触刚度、硬度、弹性模量进行了连续测量。
2.
The contact pressure distribution between silicon wafer and polishing pad and the effect of the retaining ring on it wer.
为了获得单晶硅片化学机械抛光过程中护环对接触压强分布的影响规律,从有护环化学机械抛光实际出发,建立了抛光过程的接触力学模型和边界条件,利用有限元法对有护环抛光接触状态时的接触压强分布进行了计算和分析,并利用抛光实验对计算获得结果进行了验证。
3.
In order to obtain the effect of carrier film on contact pressure distribution in the chemical-mechanical polishing(CMP) of silicon wafer,a mechanism model and a boundary equation were set up,then the contact pressure distribution was calculated and analyzed by use of finite element method,and the calculated result was verified by polishing experiments.
为了获得单晶硅片化学机械抛光过程中背垫对接触压强分布的影响规律,建立了有背垫抛光过程的接触力学模型和边界条件,利用有限元方法进行了有背垫时的接触压强分布的计算与分析,并利用抛光实验对计算结果进行了验证,获得了硅片与抛光垫的接触表面压强分布形态,以及背垫的物理参数对压强分布的影响规律。
3) monocrystalline silicon wafer
单晶硅片
1.
Phase transformations of grinding monocrystalline silicon wafer surfaces;
单晶硅片磨削的表面相变
2.
Study on the Surface Layer Damage of Monocrystalline Silicon Wafer Induced by Ultra-precision Grinding;
单晶硅片超精密磨削加工表面层损伤的研究
4) monocrystalline silicon slicing
单晶硅切片
1.
Free abrasive wire saw technique is the main method for monocrystalline silicon slicing process.
游离磨料线锯切割技术是目前单晶硅切片的主要加工方法。
5) single crystal silicon wafer
单晶硅薄片
6) single crystal substrate
单晶基片
1.
The surface smoothness of the single crystal substrate will be the most important factor, which influences the quality of the epitaxial film growth.
单晶基片的表面光洁度指标是影响后续薄膜生长质量的重要因素。
补充资料：直径6英寸硅单晶及单晶炉
直径6英寸硅单晶及单晶炉
巍 户亡‘砚.士释L朴品及沪晶护万引门l
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条