Study on luminescent property of non-crystalline silicon based films;

Structure and Luminescent Properties of the Doped Amorphous Silicon-based Films;

An a-Si thin film diodes with big current densities and high on/off ratios was presented by PECVD technology.

Investigation of microstructure and photoelectric properties of boron-doped amorphous silicon films;

We developed a new process for low temperature crystallization of amorphous silicon films, by metal induced crystallization of amorphous silicon films at low temperature.

In this paper, the new process for crystallization of amorphous silicon films, named the metal induced lateral crystallization of amorphous silicon films at low temperatures, was developed.

Study on aluminum-induced crystallization of amorphous silicon thin film;

This article presents and discusses main recrystallization technology of amorphous silicon thin films, including conventional furnace annealing, metal-induced crystallization, microwave-induced crystallization, rapid thermal annealing and laser crystallization.

The amorphous silicon thin film transistor (a-Si:H TFT) structure for effectively suppressing backlight illumination effect is proposed in this paper.