1) polycrystalline silicon sheet
多晶硅片
1.
The polycrystalline silicon sheets with columnar grain structure are made by controlling the solidification processing of the silicon sheets.
通过对硅片凝固过程的控制，制得２０ｍｍ×２０ｍｍ×１，２ｍｍ具有柱状晶组织的多晶硅片，表面平整，晶粒平均尺寸０。
2) multi-crystalline silicon texturization
多晶硅片制绒
3) silicon wafer
单晶硅片
1.
The contact stiffness,hardness and elastic modulus of silicon wafers were continuously measured during the loading por- tion of an indentation test by a nanoindenter apparatus with the continuous stiffness measurement technique.
利用纳米压痕仪通过连续刚度测量法对单晶硅片在压入过程中的接触刚度、硬度、弹性模量进行了连续测量。
2.
The contact pressure distribution between silicon wafer and polishing pad and the effect of the retaining ring on it wer.
为了获得单晶硅片化学机械抛光过程中护环对接触压强分布的影响规律,从有护环化学机械抛光实际出发,建立了抛光过程的接触力学模型和边界条件,利用有限元法对有护环抛光接触状态时的接触压强分布进行了计算和分析,并利用抛光实验对计算获得结果进行了验证。
3.
In order to obtain the effect of carrier film on contact pressure distribution in the chemical-mechanical polishing(CMP) of silicon wafer,a mechanism model and a boundary equation were set up,then the contact pressure distribution was calculated and analyzed by use of finite element method,and the calculated result was verified by polishing experiments.
为了获得单晶硅片化学机械抛光过程中背垫对接触压强分布的影响规律,建立了有背垫抛光过程的接触力学模型和边界条件,利用有限元方法进行了有背垫时的接触压强分布的计算与分析,并利用抛光实验对计算结果进行了验证,获得了硅片与抛光垫的接触表面压强分布形态,以及背垫的物理参数对压强分布的影响规律。
4) silicon wafer
硅晶片
1.
Theory and experiment on hydrodynamic suspension ultra-smooth machining for silicon wafers;
硅晶片的液流悬浮超光滑加工机理与实验
2.
Research on the Intelligent Labeling Machine for Silicon Wafers;
智能硅晶片贴标机的研制
3.
Double sided polishing process has become a main machining method for silicon wafer finishing process, but it is difficult to get ultra-smooth surface with the very stringent machining conditions.
双面抛光已成为硅晶片的主要后续加工方法,但由于需要严格的加工条件,很难获得理想的超光滑表面。
5) monocrystalline silicon wafer
单晶硅片
1.
Phase transformations of grinding monocrystalline silicon wafer surfaces;
单晶硅片磨削的表面相变
2.
Study on the Surface Layer Damage of Monocrystalline Silicon Wafer Induced by Ultra-precision Grinding;
单晶硅片超精密磨削加工表面层损伤的研究
6) Si wafer crystal direction
硅片晶向
补充资料：多晶莫来石晶须(纤维)
分子式：
CAS号：
性质：莫来石相为主晶相的多晶纤维。化学成分为Al2O3 72％～77％，SiO222％～17％，B2O3 3％～5％，P2O51.5％～3.0％。纤维直径2～7μm，纤维长度20～125μm。使用温度1350℃。多采用溶胶-凝胶法制造。主要用作补强填料，也可作为轻质、隔热保温材料使用。
CAS号：
性质：莫来石相为主晶相的多晶纤维。化学成分为Al2O3 72％～77％，SiO222％～17％，B2O3 3％～5％，P2O51.5％～3.0％。纤维直径2～7μm，纤维长度20～125μm。使用温度1350℃。多采用溶胶-凝胶法制造。主要用作补强填料，也可作为轻质、隔热保温材料使用。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条