1) seed of single crystal silicon
单晶硅籽晶
3) single-crystal silicon
单晶硅
1.
The micro-tribological and nano-mechanic properties of Ar~+ implanted single-crystal silicon were investigated by using a Micro-tribology Text and a Nano Indenter System, The results show that Ar~+ implantation of single-crystal silicon had increased the wear-resistance, the best dose is 1×10~(16) ions /cm~2.
利用离子注入技术对单晶硅表面进行了氩离子注入,用微摩擦磨损实验机研究了改性层的摩擦磨损行为,并用透射电子显微镜研究了改性层的微观结构。
2.
In Chemical-Mechanical polishing experiments we produced optical quality super smooth surfaces on single-crystal silicon, but cannot insure the surface figure.
使用机械 -化学抛光法加工大尺寸单晶硅可获超光滑表面 ,但很难保证良好的面型。
3.
The nano-scratch behaviors of Ar+ implanted single-crystal silicon were investigated by a nano indenter system, the micro-structure of the implanted layer was analyzed with TEM.
通过离子注入技术对单晶硅表面进行氩离子注入处理,利用纳米压痕仪及其附件研究了单晶硅表面在离子注入前,后的微观力学性能和变形机理,并用透射电子显微镜研究了改性层的微观结构。
4) single crystal silicon
单晶硅
1.
Study of Parameters of Neutron-Irradiated Single Crystal Silicon;
中子辐照的单晶硅参数研究
2.
Study on Partial Cone Cracks in Nano-grinding of Single Crystal Silicon;
单晶硅纳米磨削过程的摩擦裂纹试验研究
3.
Study on establishing and testing for ultra-precision machining single crystal silicon surface roughness of prediction model
单晶硅超精密切削加工表面粗糙度预测模型的建立及试验研究
5) monocrystal silicon
单晶硅
1.
Molecular dynamics simulation in monocrystal silicon indentation;
单晶硅纳米级压痕过程分子动力学仿真
2.
A molecular dynamics(MD) simulation is carried out to analyze the effect of cutting edge radius,cut-depth,and grinding speed on the depth of subsurface damage layers in monocrystal silicon grinding processes on an atomic scale.
应用分子动力学仿真研究了原子量级条件下磨粒钝圆半径、磨削深度和磨削速度对单晶硅磨削后亚表面损伤层深度的影响。
3.
The authors carry out respective researches on the making of electrode,installation of experiment,choice of electrolyte for electrolysis hydrogenadulterated of p-type monocrystal silicon,and the distribution of shallow impurity consentyation of p-type moncrystal silicon of electyolysed.
分别对 P 型单晶硅电解掺氢的电极制作、实验装置、电解液的选择、电解后浅杂质浓度的分布等进行了研究。
6) silicon wafer
单晶硅片
1.
The contact stiffness,hardness and elastic modulus of silicon wafers were continuously measured during the loading por- tion of an indentation test by a nanoindenter apparatus with the continuous stiffness measurement technique.
利用纳米压痕仪通过连续刚度测量法对单晶硅片在压入过程中的接触刚度、硬度、弹性模量进行了连续测量。
2.
The contact pressure distribution between silicon wafer and polishing pad and the effect of the retaining ring on it wer.
为了获得单晶硅片化学机械抛光过程中护环对接触压强分布的影响规律,从有护环化学机械抛光实际出发,建立了抛光过程的接触力学模型和边界条件,利用有限元法对有护环抛光接触状态时的接触压强分布进行了计算和分析,并利用抛光实验对计算获得结果进行了验证。
3.
In order to obtain the effect of carrier film on contact pressure distribution in the chemical-mechanical polishing(CMP) of silicon wafer,a mechanism model and a boundary equation were set up,then the contact pressure distribution was calculated and analyzed by use of finite element method,and the calculated result was verified by polishing experiments.
为了获得单晶硅片化学机械抛光过程中背垫对接触压强分布的影响规律,建立了有背垫抛光过程的接触力学模型和边界条件,利用有限元方法进行了有背垫时的接触压强分布的计算与分析,并利用抛光实验对计算结果进行了验证,获得了硅片与抛光垫的接触表面压强分布形态,以及背垫的物理参数对压强分布的影响规律。
补充资料：单晶硅
单质硅的一种形态。熔融的单质硅在凝固时硅原子以金刚石晶格排列成许多晶核，如果这些晶核长成晶面取向相同的晶粒，则这些晶粒平行结合起来便结晶成单晶硅(见彩图)。
单晶硅具有准金属的物理性质,有较弱的导电性,其电导率随温度的升高而增加；有显著的半导电性。超纯的单晶硅是本征半导体。在超纯单晶硅中掺入微量的ⅢA族元素，如硼可提高其导电的程度，而形成p型硅半导体；如掺入微量的ⅤA族元素,如磷或砷也可提高导电程度，形成n型硅半导体。
单晶硅的制法通常是先制得多晶硅或无定形硅，然后用直拉法或悬浮区熔法从熔体中生长出棒状单晶硅。单晶硅主要用于制作半导体元件。
单晶硅具有准金属的物理性质,有较弱的导电性,其电导率随温度的升高而增加；有显著的半导电性。超纯的单晶硅是本征半导体。在超纯单晶硅中掺入微量的ⅢA族元素，如硼可提高其导电的程度，而形成p型硅半导体；如掺入微量的ⅤA族元素,如磷或砷也可提高导电程度，形成n型硅半导体。
单晶硅的制法通常是先制得多晶硅或无定形硅，然后用直拉法或悬浮区熔法从熔体中生长出棒状单晶硅。单晶硅主要用于制作半导体元件。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条