A modified photo-induced open-circuit voltage decay method has been developed to measure the photo-generated minority carrier lifetime in HgCdTe photovoltaic detectors.

On the basis of analysis on the diffusion of minority carrier and the equivalent circuit of the LAPS, the effects of various parameters on LAPS are deduced, and a basis for fabrication of high performance LAPS is set.

The fundamental principle and calculation method to measure the minority carrier diffusion length,lifetime and bulk Fe content by surface photovoltage method were introduced.

The minority carrier lifetime ( τ ) in the base region of a solar cell is one of the most important parameters that affects the conversion efficiency of the device.

A new method of microwave reflectance applied in measurement for the minority carrier lifetime in HgCdTe is introduced.

Through measuring I-V character of solar cells, short circuit current and open circuit voltage and series resistant and shunt resistant could be gained, and then minority carrier lifetime and dark saturation current are calculated by the new method.

In this paper the minority carrier concentration is calculated analytically with the varying of the temperature T,Ge fraction x and doping concentration.

In this paper, the intrinsic carrier concentration, the minority carrier concentrationand the ratio of hole concentration to impurity concentration are calculated analyticallywith the varing of the temperature T, Ge fraction x and doping concentration.