Experimental results support that the minority-carrier exclusion effect can be strong in the conventional resistor structure when the silicon film is sufficiently thin,thus significantly raising the maximum operating temperature.

Repelling Effect of Vertical Integration under Upstream Monopoly——The Case of CHINALCO

The main surface passivation methods for silicon solar cells at present were compared according to effective lifetime of minority carrier in Si wafers, reflection losses and spectral response of silicon solar cells.

A modified photo-induced open-circuit voltage decay method has been developed to measure the photo-generated minority carrier lifetime in HgCdTe photovoltaic detectors.

On the basis of analysis on the diffusion of minority carrier and the equivalent circuit of the LAPS, the effects of various parameters on LAPS are deduced, and a basis for fabrication of high performance LAPS is set.

The fundamental principle and calculation method to measure the minority carrier diffusion length,lifetime and bulk Fe content by surface photovoltage method were introduced.

The influence of the carrier effects on the temperature rise and melt threshold, the distributions of temperature and carrier concentration in the targets are also discussed.