1) rapid recombination of minority carriers
少数载流子快速复合
2) minority carrier
少数载流子
1.
A modified photo-induced open-circuit voltage decay method has been developed to measure the photo-generated minority carrier lifetime in HgCdTe photovoltaic detectors.
采用改进的光致开路电压衰退方法测量了不同组分Hg1-xCdxTe光伏探测器中光生少数载流子寿命。
2.
On the basis of analysis on the diffusion of minority carrier and the equivalent circuit of the LAPS, the effects of various parameters on LAPS are deduced, and a basis for fabrication of high performance LAPS is set.
详细阐述了LAPS的基本构造 ,并通过分析LAPS的电路模型及少数载流子的影响得出了各种参数对LAPS的影响 ,从而为制造高性能的LAPS提供了理论基础。
3.
The fundamental principle and calculation method to measure the minority carrier diffusion length,lifetime and bulk Fe content by surface photovoltage method were introduced.
介绍了用表面光电压(SPV)法测试少数载流子的扩散长度、少子寿命和体Fe含量的基本原理及其计算方法,分析了三种常见外延结构中少子扩散长度的测试方法及其影响因素,得出了用于表面光电压测试的外延片及衬底片应满足的条件。
3) minority carrier lifetime
少数载流子寿命
1.
The minority carrier lifetime ( τ ) in the base region of a solar cell is one of the most important parameters that affects the conversion efficiency of the device.
太阳电池基区的少数载流子寿命是影响电池效率的重要因素之一。
2.
A new method of microwave reflectance applied in measurement for the minority carrier lifetime in HgCdTe is introduced.
介绍了用微波反射法测量HgCdTe中的少数载流子寿命 ,分析了其测量原理 ,并与接触式的光电导衰减法进行了对比。
3.
Through measuring I-V character of solar cells, short circuit current and open circuit voltage and series resistant and shunt resistant could be gained, and then minority carrier lifetime and dark saturation current are calculated by the new method.
本文通过对测试少数载流子寿命的各种方法进行分析后提出了一种新的测量成品太阳电池基区少数载流子寿命的方法,这种方法通过分析太阳电池的Ⅰ-Ⅴ特性得到基区少数载流子寿命与太阳电池开路电压、短路电流的关系。
4) gettering / minority carrier
吸收/少数载流子
5) minority carrier concentration
少数载流子浓度
1.
In this paper the minority carrier concentration is calculated analytically with the varying of the temperature T,Ge fraction x and doping concentration.
采用解析的方法计算了少数载流子浓度与Ge组分x、温度T以及掺杂浓度N的关系。
2.
In this paper, the intrinsic carrier concentration, the minority carrier concentrationand the ratio of hole concentration to impurity concentration are calculated analyticallywith the varing of the temperature T, Ge fraction x and doping concentration.
本文在前人研究的基础上，利用解析方法研究了应变Si_(1-x)Ge_x层中本征载流子浓度、少数载流子浓度、p型杂质电离度与Ge组分x、温度T以及掺杂浓度N的关系。
6) excess minority carrier
过剩少数载流子
补充资料：少数载流子
分子式：
CAS号：
性质：在掺杂半导体，即非本征半导体中，对电导贡献很小的载汉子，简称少子，如n型半导体的空穴，p型半导体的电子。
CAS号：
性质：在掺杂半导体，即非本征半导体中，对电导贡献很小的载汉子，简称少子，如n型半导体的空穴，p型半导体的电子。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条