GaN LED,GaN LED,在线英语词典,英文翻译,专业英语

1) GaN LED

GaN LED

We designed and fabricated several kinds large size, large area, photonic crystal GaN LED, investigated the fabrication technology and method, including that of mesa, photonic crystal, and electrode etc.

设计并研制了多种结构的大尺寸、大面积的光子晶体结构蓝光GaN LED,摸索了一套合适的工艺过程,包括刻蚀台面、制作光子晶体、制作电极等。

2) GaN-LED

GaN-LED

Damage Removal in GaN-LEDs by Two-Step Etching Technology;

两步刻蚀法去除GaN-LED刻蚀中引入的损伤

3) GaN based LED

GaN基LED

4) GaN-based white LEDs

GaN基白光LED

In this paper,the current accelerated aging experiment on three groups of GaN-based white LEDs produced on the Al2O3 substrate have been performed at 30 mA、50 mA and 70 mA.

随着老化电流的增大,GaN基白光LED的光输出功率随时间的衰减速率相对较快;随老化时间的加长,30 mA电流驱动下,GaN基白光LED相对光谱中黄光比重先增加再减小。

5) GaN-based blue LEDs

GaN基蓝光LED

6) high-power GaN-based LED

大功率GaN基LED

A high-power GaN-based LED chip structure fitted for flip-chip was designed, and the Au bumps were fabricated on Si substrate.

设计了适合于倒装的大功率GaN基LED芯片结构,在倒装基板硅片上制作了金凸点,采用热超声倒装焊接(FCB)技术将芯片倒装在基板上。

参考词条

InGaN/GaN GaN:Si GaN:Zn GaAs-GaN AlGaN/GaN GaN基 AlmGa1-mN/GaN a面GaN GaN/AlGaN i-GaN GaN HFET GaN（001） AlxG1-xN/GaN GaN/AlN 清乡北宋晚期

补充资料：gallium nitride GaN

分子式：
CAS号：

性质：白色或微黄色粉末。具有很高的化学稳定性，不溶于水，不与水和浓无机酸反应，稍与稀酸作用，缓慢与碱液反应，空气中加热800℃开始氧化，生成氧化镓。1050℃开始分解。可由气态生长细晶。在1050～1200℃由氧化镓和氨反应或由氯镓酸铵分解制取。为半导体材料和荧光粉。

说明：补充资料仅用于学习参考，请勿用于其它任何用途。

首页 \| 翻译 \| 影视 \| 论坛 \| 索引 GaN LED “LED” p-GaN GaN HEMT

1) GaN LED GaN LED 1. We designed and fabricated several kinds large size, large area, photonic crystal GaN LED, investigated the fabrication technology and method, including that of mesa, photonic crystal, and electrode etc. 设计并研制了多种结构的大尺寸、大面积的光子晶体结构蓝光GaN LED,摸索了一套合适的工艺过程,包括刻蚀台面、制作光子晶体、制作电极等。 2) GaN-LED GaN-LED 1. Damage Removal in GaN-LEDs by Two-Step Etching Technology; 两步刻蚀法去除GaN-LED刻蚀中引入的损伤 3) GaN based LED GaN基LED 4) GaN-based white LEDs GaN基白光LED 1. In this paper,the current accelerated aging experiment on three groups of GaN-based white LEDs produced on the Al2O3 substrate have been performed at 30 mA、50 mA and 70 mA. 随着老化电流的增大,GaN基白光LED的光输出功率随时间的衰减速率相对较快;随老化时间的加长,30 mA电流驱动下,GaN基白光LED相对光谱中黄光比重先增加再减小。 5) GaN-based blue LEDs GaN基蓝光LED 6) high-power GaN-based LED 大功率GaN基LED 1. A high-power GaN-based LED chip structure fitted for flip-chip was designed, and the Au bumps were fabricated on Si substrate. 设计了适合于倒装的大功率GaN基LED芯片结构,在倒装基板硅片上制作了金凸点,采用热超声倒装焊接(FCB)技术将芯片倒装在基板上。参考词条 InGaN/GaN GaN:Si GaN:Zn GaAs-GaN AlGaN/GaN GaN基 AlmGa1-mN/GaN a面GaN GaN/AlGaN i-GaN GaN HFET GaN（001） AlxG1-xN/GaN GaN/AlN 清乡北宋晚期补充资料：gallium nitride GaN 分子式： CAS号：性质：白色或微黄色粉末。具有很高的化学稳定性，不溶于水，不与水和浓无机酸反应，稍与稀酸作用，缓慢与碱液反应，空气中加热800℃开始氧化，生成氧化镓。1050℃开始分解。可由气态生长细晶。在1050～1200℃由氧化镓和氨反应或由氯镓酸铵分解制取。为半导体材料和荧光粉。说明：补充资料仅用于学习参考，请勿用于其它任何用途。
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