GaN HFET,GaN HFET,在线英语词典,英文翻译,专业英语

1) GaN HFET

GaN HFET

2) AlGaN/GaN HFET

AlGaN/GaN HFET

Recess-Gate AlGaN/GaN HFET;

凹栅AlGaN/GaN HFET

3) HFET

HFET

Output Power of an AlGaN/GaN HFET on Sapphire Substrate;

蓝宝石衬底AlGaN/GaN HFET功率特性

AlGaN/GaN HFET with Transconductance of over 325mS/mm;

跨导为325mS/mm的AlGaN/GaNHFET器件

Current collapse and two dimensional electron gas in Ⅲ-nitride HFET;

Ⅲ族氮化物HFET中的电流崩塌和二维电子气

4) MOS-HFET

MOS-HFET

With the gate length of 1 μm and the width 80 μm, MOS-HFET achieved transconductance 44 ms/mm and the maximum drain current 784mA/mm.

为了进一步减小栅漏电,提高击穿电压,将MOS结构的优点引入ALGaN/GaNHEMT器件中,研制并分析了新型的基于AlGaN/GaN的MOS-HFET结构。

5) GaN

GaN

Fabrication of GaN nanowires by ammoniating Ga_2O_3 film on V layer deposited on Si(111) substrates;

氨化Si基Ga_2O_3/V薄膜制备GaN纳米线

Catalytic Synthesis and Luminescent Characteristics of GaN Nanorods;

GaN纳米棒的催化合成及其发光特性(英文)

Observation of Dislocation Etch Pits in GaN Epilayers by Atomic Force Microscopy and Scanning Electron Microscopy;

用原子力显微镜和扫描电镜研究GaN外延层中的位错腐蚀坑(英文)

6) gallium nitride

GaN

Development of Ion-implantation Research in Gallium Nitride Material;

GaN材料中离子注入的研究进展

Optical and Electrical Properties Studies of Different Ions Implanted Gallium Nitride;

离子注入GaN的光学和电学特性研究

Based on Chin’s theory,which describes the concentration and compensation ratio dependencies of the low-field mobility in gallium nitride in wide concentration ranges (1016~1020cm-3) at room temperature,an analytic model for the compensation ratio of unintentionally doped GaN at room temperature has been obtained.

用数值方法将室温n型GaN补偿度θ表示为Caughey-Thomas解析模型函数。

参考词条

GaN:Zn GaAs-GaN AlGaN/GaN GaN基 AlmGa1-mN/GaN a面GaN GaN/AlGaN GaN-LED i-GaN GaN（001） AlxG1-xN/GaN GaN/AlN n-GaN GaN:Mg GaN HEMTs AlInGaN/GaN 支化反应绞经

补充资料：gallium nitride GaN

分子式：
CAS号：

性质：白色或微黄色粉末。具有很高的化学稳定性，不溶于水，不与水和浓无机酸反应，稍与稀酸作用，缓慢与碱液反应，空气中加热800℃开始氧化，生成氧化镓。1050℃开始分解。可由气态生长细晶。在1050～1200℃由氧化镓和氨反应或由氯镓酸铵分解制取。为半导体材料和荧光粉。

说明：补充资料仅用于学习参考，请勿用于其它任何用途。

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1) GaN HFET GaN HFET 2) AlGaN/GaN HFET AlGaN/GaN HFET 1. Recess-Gate AlGaN/GaN HFET; 凹栅AlGaN/GaN HFET 3) HFET HFET 1. Output Power of an AlGaN/GaN HFET on Sapphire Substrate; 蓝宝石衬底AlGaN/GaN HFET功率特性 2. AlGaN/GaN HFET with Transconductance of over 325mS/mm; 跨导为325mS/mm的AlGaN/GaNHFET器件 3. Current collapse and two dimensional electron gas in Ⅲ-nitride HFET; Ⅲ族氮化物HFET中的电流崩塌和二维电子气 4) MOS-HFET MOS-HFET 1. With the gate length of 1 μm and the width 80 μm, MOS-HFET achieved transconductance 44 ms/mm and the maximum drain current 784mA/mm. 为了进一步减小栅漏电,提高击穿电压,将MOS结构的优点引入ALGaN/GaNHEMT器件中,研制并分析了新型的基于AlGaN/GaN的MOS-HFET结构。 5) GaN GaN 1. Fabrication of GaN nanowires by ammoniating Ga_2O_3 film on V layer deposited on Si(111) substrates; 氨化Si基Ga_2O_3/V薄膜制备GaN纳米线 2. Catalytic Synthesis and Luminescent Characteristics of GaN Nanorods; GaN纳米棒的催化合成及其发光特性(英文) 3. Observation of Dislocation Etch Pits in GaN Epilayers by Atomic Force Microscopy and Scanning Electron Microscopy; 用原子力显微镜和扫描电镜研究GaN外延层中的位错腐蚀坑(英文) 6) gallium nitride GaN 1. Development of Ion-implantation Research in Gallium Nitride Material; GaN材料中离子注入的研究进展 2. Optical and Electrical Properties Studies of Different Ions Implanted Gallium Nitride; 离子注入GaN的光学和电学特性研究 3. Based on Chin’s theory,which describes the concentration and compensation ratio dependencies of the low-field mobility in gallium nitride in wide concentration ranges (1016~1020cm-3) at room temperature,an analytic model for the compensation ratio of unintentionally doped GaN at room temperature has been obtained. 用数值方法将室温n型GaN补偿度θ表示为Caughey-Thomas解析模型函数。参考词条 GaN:Zn GaAs-GaN AlGaN/GaN GaN基 AlmGa1-mN/GaN a面GaN GaN/AlGaN GaN-LED i-GaN GaN（001） AlxG1-xN/GaN GaN/AlN n-GaN GaN:Mg GaN HEMTs AlInGaN/GaN 支化反应绞经补充资料：gallium nitride GaN 分子式： CAS号：性质：白色或微黄色粉末。具有很高的化学稳定性，不溶于水，不与水和浓无机酸反应，稍与稀酸作用，缓慢与碱液反应，空气中加热800℃开始氧化，生成氧化镓。1050℃开始分解。可由气态生长细晶。在1050～1200℃由氧化镓和氨反应或由氯镓酸铵分解制取。为半导体材料和荧光粉。说明：补充资料仅用于学习参考，请勿用于其它任何用途。
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