High-resolution X-ray diffraction studies on the indium content and layer thicknesses in InGaN/GaN multiquantum wells;

Photoluminescence and Optical Absorption Properties of InGaN/GaN Single Quantum Well Grown by MOVPE;

P-GaN bulk material and p-InGaN/GaN superlattice used as p-contact layer are grown by low pressure metal organic chemical vapor deposition(LP-MOCVD),and their specific contact resistivity(SCR)is measured by circular transmission line model(CTLM).

The current-voltage characteristics and surface sheet resistance measurements show that,compared with p-GaN,the optimum annealing temperature of p-InGaN/GaN heterostructures is lower and the nonalloyed Ni/Au ohmic contacts can be obtained.

Study of temperature dependent electroluminescence of InGaN/GaN multiple quantum wells using low temperature scanning near-field optical microscopy;

Effect of the ratio of TMIn flow to group Ⅲ flow on the properties of InGaN/GaN multiple quantum wells;

Determination of chemical composition and average crystal lattice constants of InGaN/GaN multiple quantum wells;