GaN,GaN,在线英语词典,英文翻译,专业英语

1) GaN

GaN

Fabrication of GaN nanowires by ammoniating Ga_2O_3 film on V layer deposited on Si(111) substrates;

氨化Si基Ga_2O_3/V薄膜制备GaN纳米线

Catalytic Synthesis and Luminescent Characteristics of GaN Nanorods;

GaN纳米棒的催化合成及其发光特性(英文)

Observation of Dislocation Etch Pits in GaN Epilayers by Atomic Force Microscopy and Scanning Electron Microscopy;

用原子力显微镜和扫描电镜研究GaN外延层中的位错腐蚀坑(英文)

2) GaN

氮化镓

Synthesis of Nanocrystalline GaN by the Sol-gel Method;

采用溶胶凝胶前驱物制备氮化镓纳米晶体

Fabrication of nanoporous GaN films with AAO masks and ICP etching;

纳米孔氮化镓材料的制备和研究

Structural characterization of high quality GaN nanowires;

高质量氮化镓纳米线的结构表征

3) GaN

GaN晶体膜

Electron Microscope Analysis of the Quality of GaN Films Deposited on Ga-diffused Si (1 1 1) Substrates;

扩镓硅基GaN晶体膜质量的电镜分析

X-ray Diffraction Analysis of GaN Films Deposited on Ga-diffused Si (111) Substrates;

不同条件对扩镓硅基GaN晶体膜质量影响的XRD分析

The Investigation of GaN Films Grown on Si Substrates by Hot-Wall Chemical Vapor Deposition;

热壁化学气相沉积Si基GaN晶体膜的研究

4) GaN

Si衬底

Research on the ideality factor of GaN light-emitting diodes on Si substrate;

Si衬底GaN基LED理想因子的研究

A Study on the Characteristic of Electroluminescence for GaN Based Lateral Structure Blue Light Emitting Diodes on Si Substrate;

Si衬底GaN基同侧结构蓝光LED电致发光特性研究

Device Properties Study of Blue GaN LED on Si Substrates;

Si衬底GaN基蓝光LED器件性能研究

5) GaN

氮化镓（GaN）

6) GaN

氮化嫁

参考词条

GaN nanorods Gan River p-GaN GaN film GaN power GaN particles GaN nanowires GaN substrate Cai Gan Gan An San Gan of TCM “抵顶”作用锉锯机械

补充资料：gallium nitride GaN

分子式：
CAS号：

性质：白色或微黄色粉末。具有很高的化学稳定性，不溶于水，不与水和浓无机酸反应，稍与稀酸作用，缓慢与碱液反应，空气中加热800℃开始氧化，生成氧化镓。1050℃开始分解。可由气态生长细晶。在1050～1200℃由氧化镓和氨反应或由氯镓酸铵分解制取。为半导体材料和荧光粉。

说明：补充资料仅用于学习参考，请勿用于其它任何用途。

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1) GaN GaN 1. Fabrication of GaN nanowires by ammoniating Ga_2O_3 film on V layer deposited on Si(111) substrates; 氨化Si基Ga_2O_3/V薄膜制备GaN纳米线 2. Catalytic Synthesis and Luminescent Characteristics of GaN Nanorods; GaN纳米棒的催化合成及其发光特性(英文) 3. Observation of Dislocation Etch Pits in GaN Epilayers by Atomic Force Microscopy and Scanning Electron Microscopy; 用原子力显微镜和扫描电镜研究GaN外延层中的位错腐蚀坑(英文) 2) GaN 氮化镓 1. Synthesis of Nanocrystalline GaN by the Sol-gel Method; 采用溶胶凝胶前驱物制备氮化镓纳米晶体 2. Fabrication of nanoporous GaN films with AAO masks and ICP etching; 纳米孔氮化镓材料的制备和研究 3. Structural characterization of high quality GaN nanowires; 高质量氮化镓纳米线的结构表征 3) GaN GaN晶体膜 1. Electron Microscope Analysis of the Quality of GaN Films Deposited on Ga-diffused Si (1 1 1) Substrates; 扩镓硅基GaN晶体膜质量的电镜分析 2. X-ray Diffraction Analysis of GaN Films Deposited on Ga-diffused Si (111) Substrates; 不同条件对扩镓硅基GaN晶体膜质量影响的XRD分析 3. The Investigation of GaN Films Grown on Si Substrates by Hot-Wall Chemical Vapor Deposition; 热壁化学气相沉积Si基GaN晶体膜的研究 4) GaN Si衬底 1. Research on the ideality factor of GaN light-emitting diodes on Si substrate; Si衬底GaN基LED理想因子的研究 2. A Study on the Characteristic of Electroluminescence for GaN Based Lateral Structure Blue Light Emitting Diodes on Si Substrate; Si衬底GaN基同侧结构蓝光LED电致发光特性研究 3. Device Properties Study of Blue GaN LED on Si Substrates; Si衬底GaN基蓝光LED器件性能研究 5) GaN 氮化镓（GaN） 6) GaN 氮化嫁参考词条 GaN nanorods Gan River p-GaN GaN film GaN power GaN particles GaN nanowires GaN substrate Cai Gan Gan An San Gan of TCM “抵顶”作用锉锯机械补充资料：gallium nitride GaN 分子式： CAS号：性质：白色或微黄色粉末。具有很高的化学稳定性，不溶于水，不与水和浓无机酸反应，稍与稀酸作用，缓慢与碱液反应，空气中加热800℃开始氧化，生成氧化镓。1050℃开始分解。可由气态生长细晶。在1050～1200℃由氧化镓和氨反应或由氯镓酸铵分解制取。为半导体材料和荧光粉。说明：补充资料仅用于学习参考，请勿用于其它任何用途。
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