2) InGaN/GaN MQW
InGaN/GaN多量子阱(MQW)
3) InGaN/GaN multiple quantum wells
InGaN/GaN多量子阱
1.
Study of temperature dependent electroluminescence of InGaN/GaN multiple quantum wells using low temperature scanning near-field optical microscopy;
低温近场光学显微术对InGaN/GaN多量子阱电致发光温度特性的研究
2.
Effect of the ratio of TMIn flow to group Ⅲ flow on the properties of InGaN/GaN multiple quantum wells;
In源流量与Ⅲ族流量之比对InGaN/GaN多量子阱性质的影响
3.
Determination of chemical composition and average crystal lattice constants of InGaN/GaN multiple quantum wells;
InGaN/GaN多量子阱的组分确定和晶格常数计算
4) InGaN/GaN multiple quantum well
InGaN/GaN多量子阱
1.
Enhanced luminescence of InGaN/GaN multiple quantum wells with indium doped GaN barriers;
垒掺In提高InGaN/GaN多量子阱发光特性
2.
The properties of temperature dependent photoluminescence(TDPL)of InGaN/GaN multiple quantum well(MQW)grown by metal-organic chemical vapor deposition(MOCVD)were experimentally investigated.
采用低压金属有机化学沉积方法制备了InGaN/GaN多量子阱。
6) GaN based quantum dots
GaN基量子点
补充资料：单量子阱(见量子阱)
单量子阱(见量子阱)
single quantum well
单且子阱sillgle quantum well见量子阱。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条