1) GaN/AlN quantum dot
GaN/AlN量子点结构
1.
The calculation of electronic structure in GaN/AlN quantum dots with finite element method;
有限元法计算GaN/AlN量子点结构中的电子结构
2.
An effective method is introduced to investigate the strained fields and piezoelectric effect in GaN/AlN quantum dots (QDs) with hexagonal truncated pyramid shape.
从Ⅲ-Ⅴ族氮化物半导体压电极化对应变的依赖关系出发,采用有限元方法计算了GaN/AlN量子点结构中的应变分布,研究了其自发极化、压电极化以及极化电荷密度。
2) AlGaN/AlN/GaN structure
AlGaN/AlN/GaN结构
1.
The transport property of two dimensional electron gas in AlGaN/AlN/GaN structure;
AlGaN/AlN/GaN结构中二维电子气的输运特性
4) AlN/GaN heterostructure
AlN/GaN异质结
1.
A variational method and the force balance equation are adopted to investigate the influence of optical-phonon scattering(including interface optical phonons and half-space optical phonons) on the mobility of a two-dimensional electron gas in a wurtzite AlN/GaN heterostructure by taking energy band bending and finite barrier into account.
考虑导带弯曲和有限高势垒,利用变分法和力平衡方程研究了界面光学声子和半空间光学声子散射对纤锌矿AlN/GaN异质结中二维电子气(2DEG)迁移率的影响,数值计算了各支光学声子作用下迁移率随电子面密度及温度的变化。
5) GaN based quantum dots
GaN基量子点
补充资料：单量子阱(见量子阱)
单量子阱(见量子阱)
single quantum well
单且子阱sillgle quantum well见量子阱。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条