1.
Studies of Third-order Nonlinear Optical Susceptibility in InGaN/GaN Quantum Dot;
InGaN/GaN量子点中三阶非线性光学极化率的研究
2.
Study of Nonlinear Optical Property in InGaN/GaN Quantum Well;
InGaN/GaN量子阱中的非线性光学性质研究
3.
Improving the quantum well properties with n-type InGaN/GaN superlattices layer
引入n型InGaN/GaN超晶格层提高量子阱特性研究
4.
Experimental and theoretical study of blue InGaN/GaN multiple quantum well blue light-emitting diodes
InGaN/GaN多量子阱蓝色发光二极管的实验与模拟分析
5.
Atomistic Simulations of Elastic Moduli in GaN Quantum Dots
GaN量子点弹性模量的分子动力学模拟
6.
Binding Energy of a Hydrogenic-like Impurity in In_xGa_(1-x)N/GaN Quantum Dots;
In_xGa_(1-x)N/GaN量子点中类氢杂质态结合能
7.
Interface Effect on the Impurity State in a GaN/Ga_(1-x)Al_xN Quantum Dot under Pressure
压力下GaN/Ga_(1-x)Al_xN量子点中杂质态的界面效应
8.
Calculation of the Critical Layer Thickness for GaN/InGaN
GaN/InGaN应变层临界厚度的计算
9.
Reduce Ohmic Contact Resistance to p-GaN Using InGaN/AlGaN Superlattice
用InGaN/AlGaN超晶格降低p-GaN欧姆接触电阻
10.
Investigation on the injected current dependence of InGaN blue LED's quantum efficiency
InGaN蓝光LED量子效率与注入电流的关系研究
11.
Effect of different effective mass and electric field on the electronic structure in GaN/Al_xGa_(1-x)N spherical quantum dot
有效质量差异和电场对GaN/Al_xGa_(1-x)N球形量子点电子结构的影响
12.
Effects of Hydrogenic-like Impurity on Exciton Ground-State and Binding Energy in In_xGa_(1-x)N/GaN Quantum Dots;
类氢杂质对In_xGa_(1-x)N/GaN量子点中激子的基态能和结合能的影响
13.
Impurity States and Polaron Effect in the Strain GaN/Ga_xAl_(1-x)N Cylindrical Quantum Dot
应变GaN/Al_xGa_（1-x）N柱形量子点中杂质态和极化子效应
14.
The Energy of an Exciton in a Wurtzite GaN/Al_xGa_(1-x)N Quantum Well
纤锌矿GaN/Al_xGa_(1-x)N量子阱中激子能量
15.
Energy of Bound Polaron in Wurtzite GaN/AlN Quantum Well
纤锌矿GaN/AlN量子阱中束缚极化子能量
16.
Research on AlInGaN Quaternary Alloys as MQW Barriers in GaN-Based Laser Diodes
GaN基激光器多量子阱垒材料的研究
17.
Energy of the Bound Polaron in Wurtzite GaN/Al_xGa_(1-x)N Quantum Well;
纤锌矿GaN/Al_xGa_（1-x）N量子阱中束缚极化子能量
18.
Optical Phonon Influence on the Mobility of Electrons in AlN/GaN Quantum Wells;
光学声子对AlN/GaN量子阱中电子迁移率的影响