1) InGaN quantum well laser
InGaN量子阱激光器
2) multi-quantum well lasers with InGaN semiconductor
InGaN多量子阱激光器
3) InGaN quantum well
InGaN量子阱
4) InGaN laser diodes
InGaN激光器
1.
Time-dependent thermal simulation of ridge-geometry InGaN laser diodes is carried out with a two-dimensional model.
利用含时二维热传导模型分析了蓝宝石衬底上生长、制作的脊形InGaN激光器内波导层的温度分布和时间演化规律。
5) quantum well laser
量子阱激光器
1.
This paper deduces the formula of the multi—quantum well laser s optimal well numbers.
推导了量子阱激光器(也称为低阈值量子阱激光器)的最佳阱数的计算公式,经与实验值相比较,比较吻合,并且用PSpice模拟了阈值电流与腔长的关系。
2.
The cross-saturation characteristics of GaN quantum well lasers are theoretically calculated and analyzed based on the analyses of the energy band structure and the transition matrix elements of GaN.
通过分析GaN能带结构和跃迁矩阵元,对GaN基量子阱激光器的交叉饱和特性作了理论上的计算与分析。
3.
In this paper,the current modulation characteristics of a high power GaAs/GaAlAs quantum well laser in low frequencies(100Hz～20KHz)were experimentally investigaed in the first time.
本文首次对高功率GaAs/GaAlAs量子阱激光器 ( 80 8nm)的低频 ( 10 0Hz～ 2 0KHz)电流调制特性进行了实验研究。
6) SCH quantum well laser
SCH量子阱激光器
1.
Study on the chaotic synchronization communication of different structure SCH quantum well lasers;
SCH量子阱激光器的混沌同步通信研究
补充资料：单量子阱(见量子阱)
单量子阱(见量子阱)
single quantum well
单且子阱sillgle quantum well见量子阱。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条