1) GaN/Al_xGa_(1-x)N quantum dots
GaN/AlxGa1-xN量子点
2) Al_xGa_ 1-x N/GaN double quantum wells
AlxGa1-xN/GaN双量子阱
3) In_xGa_(1-x)N/GaN quantum dots
InxGa1-xN/GaN量子点
4) Al x Ga 1-x N/GaN heterostructure
AlxGa1-xN/GaN异质结构
5) GaN/Al_xGa_1-xN heterojunction
GaN/AlxGa1-xN异质结
1.
A modified variational method is adopted to investigate the binding energies of the shallow impurity states near the interface of a strained GaN/Al_xGa_1-xN heterojunction by using a simplified coherent potential approximation.
对应变GaN/AlxGa1-xN异质结系统,考虑理想界面突变势垒,引入简化相干势近似,采用变分法讨论了流体静压力下外界电场对束缚于界面附近的浅杂质态结合能的影响。
6) Al xGa 1-x N/GaN heterostructure
AlxGa1-xN/GaN异质结
补充资料：单量子阱(见量子阱)
单量子阱(见量子阱)
single quantum well
单且子阱sillgle quantum well见量子阱。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条