1) Heavily As-doped silicon
重掺砷硅单晶
1.
Heavily As-doped silicon substrates are adopted by many device manufactories because of higher As-doping density.
重掺砷硅衬底片正日益受到器件厂家的青睐，所以研究重掺砷硅单晶中的氧沉淀及诱生缺陷对实现重掺衬底的内吸除有重大意义。
2) heavily As doped silicon crystal
重掺砷单晶硅
3) heavily Sb-doped silicon
重掺锑硅单晶
1.
Flow pattern defects(FPDs) in as-grown and rapid thermal annealed heavily Sb-doped silicon wafers was investigated.
对大直径重掺锑硅单晶中流动图形缺陷(FPDs)进行了研究。
4) heavily doped CZSi
重掺杂硅单晶
5) heavily arsenic-doped CZ silicon
重掺砷直拉硅片
1.
Through the comparative investigation on oxygen precipitation behaviors in the heavily and lightly arsenic-doped n-type Czochralski(CZ) silicon wafers subjected to the two-step annealing successively at low temperature(450—800℃) and high temperature(1000℃),the effects of low-temperature annealing on oxygen precipitate nucleation in heavily arsenic-doped CZ silicon wafer have been elucidated.
通过对比研究重掺砷直拉硅片和轻掺n型直拉硅片经过低温(450—800℃)和高温(1000℃)两步退火的氧沉淀行为,阐明了低温退火对重掺掺砷直拉硅片的氧沉淀形核的作用。
补充资料：直径6英寸硅单晶及单晶炉
直径6英寸硅单晶及单晶炉
巍 户亡‘砚.士释L朴品及沪晶护万引门l
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
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