1.
Oxygen Precipitation Behaviors in Conventional and Nitrogen-codoped Heavily Arsenic-doped Czochralski Silicon;
普通和掺氮的重掺砷直拉硅单晶的氧沉淀行为
2.
Investigation on Oxygen Precipitation and Induced-Defect in Heavily Arsenic Doped Silicon;
重掺砷硅单晶中氧沉淀及诱生缺陷的研究
3.
Application of Nitrogen-doped Czochralski Silicon in Solar Cell;
掺氮直拉单晶硅在太阳电池中的应用
4.
Study of Impurities and Defects in Germanium Doped Czochralski Silicon for Photovoltaic Applications;
掺锗直拉硅中的杂质缺陷及其光伏应用研究
5.
Investigation of Oxygen Precipitate and Induced-Defects in Fast Neutron Irradiated Nitrogen-Doped Czochralski Silicon;
快中子辐照掺氮直拉硅中氧沉淀及诱生缺陷研究
6.
The control on EPD during growing HB-GaAs-Si single crystals
水平掺硅砷化镓单晶生长过程中位错的控制
7.
Microdefects and Defect Engineering of Iso-group Elements Doped Czochralski Silicon Used for Large-scale Integrated Circuits;
大规模集成电路用同族元素掺杂直拉硅单晶的微缺陷及其缺陷工程
8.
We made the Czochralski silicon single crystal with a diameter of 12 inches.
直径12英寸直拉单晶硅研制成功。
9.
Liquid encapsulated czochralski-grown gallium arsenide single crystals and As-cut slices
GB/T11093-1989液封直拉法砷化镓单晶及切割片
10.
Test method for thickness of lightly doped silicon epitaxial layers on heavily doped silicon substrates by infrared reflectance
GB/T14847-1993重掺杂衬底上轻掺杂硅外延层厚度的红外反射测量方法
11.
Effect of Rapid Thermal Process on Oxygen Precipitates in Heavily Doped Silicon Wafers;
快速热处理对重掺杂硅片中氧沉淀的影响
12.
The Czochralski silicon monocrystalline polished wafer with a diameter of eight inches
8英寸直拉硅单晶抛光片
13.
Investigation of Oxygen Precipitation and Internal Gettering in Czochralski Silicon;
直拉硅单晶的氧沉淀及内吸杂的研究
14.
Investigation on Rapid Thermal Processing of Czochralski-grown (CZ) Silicon;
直拉硅单晶的快速热处理（RTP）研究
15.
Investigation of the V_2 defect in fast neutron irradiated Czochralski silicon;
快中子辐照直拉硅中V_2的退火研究
16.
Investigation of a New Intrinsic Gettering Process for Large-diameter Czochralski Silicon Wafers;
大直径直拉硅片的一种新型内吸杂工艺研究
17.
Electroluminescence from a Mn~(2+) Activated SiO_2:Si Film on n~+-Si Substrate
硅基掺锰富硅氧化硅薄膜的电致发光
18.
Defect Engineering in Czochralski Silicon Used for Large-scale Integrated Circuits;
大规模集成电路用直拉硅单晶的缺陷工程