1) wide band gap semiconductor
宽带隙半导体
1.
Preparation and application of AIN films with wide band gap semiconductor;
宽带隙半导体AIN薄膜的制备及应用
2.
Recently, a great deal of interest in wide band gap semiconductor of one -dimensional GaN nanomaterials has been stimulated by the discovery of novel property and potential application in optical, electric and mechanical fields.
近年来，宽带隙半导体材料—GaN一维纳米材料已引起了人们极大的兴趣，这些纳米材料具有许多独特的性能并且在光、电及机械等方面具有极大的应用潜能。
4) narrow band gap semiconductor
窄带隙半导体
1.
In recent years,narrow band gap semiconductors have attracted extensive attention and become the research focus of the novel semiconductor materials because they are capable of Absorbing the visible light,degrading the organic pollutants and producing clean energy by splitting the water into hydrogen and oxygen under visible light irradiation.
近年来,窄带隙半导体材料因具有吸收太阳光可见波段能量、可见光催化降解有机物及可见光解水制氢的优异特性而成为新型半导体材料的研发热点。
5) wide band gap semiconductor
宽禁带半导体
1.
β-Ga_2O_3 single crystals,the wide band gap semiconductor,were grown using floating zone technique.
用浮区法生长得到了宽禁带半导体材料β-Ga2O3单晶,对其吸收光谱、荧光光谱进行了分析。
2.
InN and GaN are the most important optoelectronic materials of wide band gap semiconductors now.
InN和GaN是宽禁带半导体中最重要的光电子材料,但现在还存在一些技术上的困难阻碍了它们的研究进展,其中一个重要的问题就是缺少合适的衬底材料。
6) wide bandgap semiconductor(WBG)
宽禁带(WBG)半导体
补充资料：宽带隙半导体（wide-bandsemiconductor）
宽带隙半导体（wide-bandsemiconductor）
室温下，Si的带隙为1.1eV，GaAs的带隙为1.43eV，一般把室温下带隙大于2.0eV的半导体材料归类于宽带隙半导体，宽带隙半导体在蓝、紫光和紫外光电子器件，高频、高温、高功率电子器件及场发射器件方面应用广泛。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条