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1)  Wide band-gap Ⅱ-Ⅵ semiconductors
宽带Ⅱ-Ⅵ族半导体
2)  wide band gap Ⅱ-Ⅵ diluted semiconductors
宽带Ⅱ-Ⅵ族磁性半导体
3)  Ⅱ-Ⅵ semiconductor
Ⅱ-Ⅵ族半导体
1.
The scattering characteristics of the Ⅱ-Ⅵ semiconductor were analyzed by a method which combines the second-order finite-element method with the rigorous mode matching procedure.
用有限元和场匹配相结合的方法分析了Ⅱ-Ⅵ族半导体材料的散射特性。
4)  Ⅱ-Ⅵ semiconductors
Ⅱ-Ⅵ半导体
5)  Ⅱ-Ⅵ group semiconductor quantum dots
Ⅱ-Ⅵ族半导体量子点
1.
Ⅱ-Ⅵ group semiconductor quantum dots(QDs) and QDs/polymer nanocomposites have attracted considerable interests because of their unique photocatalystic,optical and optoelectronic properties.
Ⅱ-Ⅵ族半导体量子点及其聚合物纳米复合材料在光催化剂、电致或光致发光器件等方面都有优异的表现。
6)  Ⅱ-Ⅵ oxide semiconductor
Ⅱ-Ⅵ族氧化物半导体
补充资料:宽禁带半导体(见半导体的能带结构)


宽禁带半导体(见半导体的能带结构)
wide gap semiconductor

  习一’平叼能带结构。‘J~正J“、二二,,Conauctor见半
  
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