1) Wide band-gap Ⅱ-Ⅵ semiconductors
宽带Ⅱ-Ⅵ族半导体
2) wide band gap Ⅱ-Ⅵ diluted semiconductors
宽带Ⅱ-Ⅵ族磁性半导体
3) Ⅱ-Ⅵ semiconductor
Ⅱ-Ⅵ族半导体
1.
The scattering characteristics of the Ⅱ-Ⅵ semiconductor were analyzed by a method which combines the second-order finite-element method with the rigorous mode matching procedure.
用有限元和场匹配相结合的方法分析了Ⅱ-Ⅵ族半导体材料的散射特性。
4) Ⅱ-Ⅵ semiconductors
Ⅱ-Ⅵ半导体
5) Ⅱ-Ⅵ group semiconductor quantum dots
Ⅱ-Ⅵ族半导体量子点
1.
Ⅱ-Ⅵ group semiconductor quantum dots(QDs) and QDs/polymer nanocomposites have attracted considerable interests because of their unique photocatalystic,optical and optoelectronic properties.
Ⅱ-Ⅵ族半导体量子点及其聚合物纳米复合材料在光催化剂、电致或光致发光器件等方面都有优异的表现。
6) Ⅱ-Ⅵ oxide semiconductor
Ⅱ-Ⅵ族氧化物半导体
补充资料:宽禁带半导体(见半导体的能带结构)
宽禁带半导体(见半导体的能带结构)
wide gap semiconductor
习一’平叼能带结构。‘J~正J“、二二,,Conauctor见半
说明:补充资料仅用于学习参考,请勿用于其它任何用途。
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