1.
Characterization for the Structures and Properties of Wide Bandgap Semiconductor In_2O_3 by First-principle Calculations
宽禁带半导体In_2O_3结构和性能的第一性原理研究
2.
Development of Solar-blind Ultraviolet Detectors Based on Wide Bandgap Semiconductors
宽禁带半导体日盲紫外探测器研究进展
3.
Recent Development and Future Perspective of Silicon Carbide Power Devices--Opportunity and Challenge
宽禁带半导体SiC功率器件发展现状及展望
4.
Fabrication of Wide-band Semiconductor Nanostructures and Study of Its Field Emission Application;
宽禁带半导体纳米结构制备及其场发射应用研究
5.
Study of ZnO & GaN Wide Band-gap Semiconductors: Microstructure Modulation and Property Characterization
宽禁带半导体ZnO、GaN及其相关材料的微结构调控与性能研究
6.
News in Brief--4th International Conference on the Physics of Narrow Gap Semiconductors
第四次国际窄禁带半导体物理会议
7.
Field Emission Properties of Several Wide Band Gap Semiconductor Materials;
几种宽带隙半导体材料的场发射特性研究
8.
The Study on Defects in ZnO and GaN Wide Band Gap Semiconductors Using Positron Annihilation Techniques;
正电子对ZnO和GaN宽带隙半导体中缺陷的研究
9.
Research on Broad Band Gap High Curie Point Rare Magnetic Semiconductor Material;
宽带隙高居里点稀磁半导体材料的研究
10.
Preparation and Characteristic of Carbon Related Wide Bandgap Semiconductor Materials Prepared by Chemical Vapor Deposition;
CVD制备碳基宽带隙半导体材料及其特性研究
11.
The Study on Preparation, Characterization and Properties of Doped ZnO and SnO_2 Nanostructure Materials
宽带隙半导体ZnO及SnO_2纳米材料的掺杂研究
12.
A Study on Electronic Structures and Magnetism of Surface in Wide Band-gap Semiconductors
宽带隙半导体表面电子结构和磁性研究
13.
Overview of the Development of Wide Band-Gap Semiconductor Technologies for Military and Aeronautical Applications in Advanced Countries
国外军事和宇航应用宽带隙半导体技术的发展
14.
Research on Optical and Conductivity Properties of p-type Conducting CuAl_(1-x)Fe_xO_2 with Wide Band Gap
p型宽带隙半导体CuAl_(1-x)Fe_xO_2的光电性能研究
15.
The theoretical and experimental aspects of inter-band optical transitions are discussed for narrow gap semiconductors.
讨论窄禁带半导体带间光吸收跃迁的理论和实验.
16.
Study of Band Gap Broadening Method and Waveguide Transmission Property of Photonic Crystal Formed by Holographic Lithography
全息光子晶体禁带展宽方法和波导传输特性的研究
17.
The first order forbidden energy?band width is the biggest when cylindrical radius is about 40 ?.
圆柱半径在40 左右时,第一禁带宽度最大。
18.
Widening of PBG in 1D Photonic Crystal and Design of Filter;
一维光子晶体禁带扩宽及滤波器设计