1) large energy gap semiconductor
大能隙半导体
2) direct-gap semiconductor
直接能隙半导体
3) Constant-bandgap nano-material
常能隙半导体材料
5) wide band gap semiconductor
宽带隙半导体
1.
Preparation and application of AIN films with wide band gap semiconductor;
宽带隙半导体AIN薄膜的制备及应用
2.
Recently, a great deal of interest in wide band gap semiconductor of one -dimensional GaN nanomaterials has been stimulated by the discovery of novel property and potential application in optical, electric and mechanical fields.
近年来，宽带隙半导体材料—GaN一维纳米材料已引起了人们极大的兴趣，这些纳米材料具有许多独特的性能并且在光、电及机械等方面具有极大的应用潜能。
6) narrow band gap semiconductor
窄带隙半导体
1.
In recent years,narrow band gap semiconductors have attracted extensive attention and become the research focus of the novel semiconductor materials because they are capable of Absorbing the visible light,degrading the organic pollutants and producing clean energy by splitting the water into hydrogen and oxygen under visible light irradiation.
近年来,窄带隙半导体材料因具有吸收太阳光可见波段能量、可见光催化降解有机物及可见光解水制氢的优异特性而成为新型半导体材料的研发热点。
补充资料：间接带隙(见半导体的能带结构)
间接带隙(见半导体的能带结构)
indirect band gap
I’ed接带隙indireet band gap见半导体的能带结构。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条