1) undoped LEC GaAs
非掺杂液封直拉砷化镓
2) LEC GaAs crystal
直拉砷化镓单晶
3) rare earth doped GaN
稀土掺杂氮化镓
4) heavily arsenic-doped CZ silicon
重掺砷直拉硅片
1.
Through the comparative investigation on oxygen precipitation behaviors in the heavily and lightly arsenic-doped n-type Czochralski(CZ) silicon wafers subjected to the two-step annealing successively at low temperature(450—800℃) and high temperature(1000℃),the effects of low-temperature annealing on oxygen precipitate nucleation in heavily arsenic-doped CZ silicon wafer have been elucidated.
通过对比研究重掺砷直拉硅片和轻掺n型直拉硅片经过低温(450—800℃)和高温(1000℃)两步退火的氧沉淀行为,阐明了低温退火对重掺掺砷直拉硅片的氧沉淀形核的作用。
6) LEC
液封直拉
1.
Controlling the growth parameters to achieve a single crystal is the importance in highpressure liquid-encapsulated Czochralski(LEC) growth of large diameter GaP crystal.
用高压液封直拉法制备大直径GaP单晶重要的是控制拉制参数,如埚位、氧化硼厚度、热场、晶体坩埚直径比等。
2.
Some key factors to growing InP single crystals by HP-LEC method were discussed,such as heater,heat-preservation system,dopant,crucible,growth parameters and so on.
通过对高压液封直拉法InP单晶生长过程中的几个重要因素包括加热器和保温系统、掺杂剂、坩埚和生长参数等的分析,设计了合适的热场系统和生长条件,有效地降低了孪晶产生的几率。
补充资料：液封
分子式：
CAS号：
性质：以液体为密封介质的截止器。
CAS号：
性质：以液体为密封介质的截止器。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条