1) p-type gallium arensidep
型砷化镓
2) large GaAs
大型砷化镓
1.
A set of numerical analysis for the flow and heat transfer within the melt in the Czochralski growth of large GaAs single crystal was carried out by employing the low-Reynolds number κ-ε model.
采用低雷诺数κ-ε模型,计算分析了Cz法大型砷化镓单晶生长中熔体内的热量、动量输运特性。
3) Gallium arsenide
砷化镓
1.
In this paper, polyferric silicate sulfate (PFSS) was prepared and arsenic-containing wastewater from gallium arsenide plant was flocculated by it.
用自制的无机高分子聚合硅酸铁(PFSS),对砷化镓生产中的含砷废水进行了混凝处理。
2.
Arsenic containing wastewater from gallium arsenide production was treated by coagulation process using self made polyferric metasilicate.
用自制的聚合硅酸铁 (PFSiC)对砷化镓生产中的含砷废水进行混凝处理。
3.
A great deal of wastewater was produced in the manufacturing of gallium arsenide wafers,and the main contamination was gallium arsenide particles in suspension.
砷化镓晶片生产过程中 ,产生大量废水 ,其中主要污染物是悬浮状态的砷化镓微粒。
4) GaAs
砷化镓
1.
Study on recovering Ga from GaAs scraps by vacuum metallurgy;
真空法处理砷化镓废料回收镓的研究
2.
A Quantitative Method of AB Microscopic Defects in Semi-insulating GaAs Single Crystals;
半绝缘砷化镓单晶中AB微缺陷的定量测量方法
3.
Electron Acoustic Microscopic Study of GaAs Epitaxial Layers;
砷化镓半导体外延层的电子声成像
5) φ 76mm GaAs
76mm砷化镓
6) Aluminum Gallium Arsenide
砷化铝镓
补充资料：砷锑化铝镓
分子式：GaxAl1-xSbyAs1-y; o≤x≤1 o≤y≤1
CAS号：
性质：周期表第III、V族元素化合物半导体。立方晶系闪锌矿型结构。晶格常数和禁带宽度随x、y变化，存在间接带隙半导体区。可在锑化镓、砷化铟、磷化铟衬底上用分子束外延、液相外延等方法制备。为制作红外发光器件、激光器件和探测器件的材料。
CAS号：
性质：周期表第III、V族元素化合物半导体。立方晶系闪锌矿型结构。晶格常数和禁带宽度随x、y变化，存在间接带隙半导体区。可在锑化镓、砷化铟、磷化铟衬底上用分子束外延、液相外延等方法制备。为制作红外发光器件、激光器件和探测器件的材料。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条