GaN-LED,GaN-LED,在线英语词典,英文翻译,专业英语

1) GaN-LED

GaN-LED

Damage Removal in GaN-LEDs by Two-Step Etching Technology;

两步刻蚀法去除GaN-LED刻蚀中引入的损伤

2) GaN LED

GaN LED

We designed and fabricated several kinds large size, large area, photonic crystal GaN LED, investigated the fabrication technology and method, including that of mesa, photonic crystal, and electrode etc.

设计并研制了多种结构的大尺寸、大面积的光子晶体结构蓝光GaN LED,摸索了一套合适的工艺过程,包括刻蚀台面、制作光子晶体、制作电极等。

3) Gallium

Density and Viscosity of Gallium Melt and Its Microstructure;

液态Ga的密度和黏度及其微观结构

Gallium bearing ferrites with different gallium content were synthesized by oxidation of ferrous and gallium ions under alkaline condition and room temperature.

采用氧化-沉淀法在室温下合成了不同Ga含量的Ga取代磁铁矿,并对上述产物进行了IR,XRD,Mossbauer等谱学解析和磁滞回线的测量。

The adsorption behavior of nanometer TiO_2 towards Gallium (Ga) Indium (In) and Thallium (Tl) was investigated with inductively coupled plasma atomic emission spectrometry (ICP-AES).

研究了纳米TiO2材料对Ga,In,Tl的吸附性能,考察了吸附动力学、最佳酸度、富集倍数和吸附容量,确定了待测金属离子的最佳吸附条件。

4) Ga

Influences of Gallium on Microstructure and Mechanical Properties of Mg-x%Al-2%Ga Alloys;

Ga对铸态Mg-x%Al-2%Ga镁合金显微组织和力学性能的影响

Preliminary Feasibility Study of Extracting Ga、Nb、Li and Sc from Bauxite Ore;

从铝土矿中提取Ga、Nb、Li、Sc的可行性初步研究

Effects of Ga on electrochemical properties of Al-Zn-In sacrificial anodes;

Ga对Al-Zn-In合金牺牲阳极电化学性能影响

5) Ga-In-As

Ga-In-As

THERMODYNAMICS OF Ga-In-As SYSTEM UNDER LATTICE DEFORMATION;

晶格形变情况下Ga－In－As体系热力学研究

6) GaAs

Ga As

Interference of Electron in GaAs/AlGaAs Multiquantum Well Structure;

Ga As/Al Ga As多量子阱结构中的电子干涉

参考词条

Ga/HZSM-5 Pt-Ga ~（67）Ga GA-BP 富In（Ga） e-GA FP-GA 掺Ga Ga-ZSM-5 ~（71）Ga L-GA （67）~Ga GA-Simplex ~（68）Ga Ca2+-GA 混流式干燥机

补充资料：gallium nitride GaN

分子式：
CAS号：

性质：白色或微黄色粉末。具有很高的化学稳定性，不溶于水，不与水和浓无机酸反应，稍与稀酸作用，缓慢与碱液反应，空气中加热800℃开始氧化，生成氧化镓。1050℃开始分解。可由气态生长细晶。在1050～1200℃由氧化镓和氨反应或由氯镓酸铵分解制取。为半导体材料和荧光粉。

说明：补充资料仅用于学习参考，请勿用于其它任何用途。

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1) GaN-LED GaN-LED 1. Damage Removal in GaN-LEDs by Two-Step Etching Technology; 两步刻蚀法去除GaN-LED刻蚀中引入的损伤 2) GaN LED GaN LED 1. We designed and fabricated several kinds large size, large area, photonic crystal GaN LED, investigated the fabrication technology and method, including that of mesa, photonic crystal, and electrode etc. 设计并研制了多种结构的大尺寸、大面积的光子晶体结构蓝光GaN LED,摸索了一套合适的工艺过程,包括刻蚀台面、制作光子晶体、制作电极等。 3) Gallium Ga 1. Density and Viscosity of Gallium Melt and Its Microstructure; 液态Ga的密度和黏度及其微观结构 2. Gallium bearing ferrites with different gallium content were synthesized by oxidation of ferrous and gallium ions under alkaline condition and room temperature. 采用氧化-沉淀法在室温下合成了不同Ga含量的Ga取代磁铁矿,并对上述产物进行了IR,XRD,Mossbauer等谱学解析和磁滞回线的测量。 3. The adsorption behavior of nanometer TiO_2 towards Gallium (Ga) Indium (In) and Thallium (Tl) was investigated with inductively coupled plasma atomic emission spectrometry (ICP-AES). 研究了纳米TiO2材料对Ga,In,Tl的吸附性能,考察了吸附动力学、最佳酸度、富集倍数和吸附容量,确定了待测金属离子的最佳吸附条件。 4) Ga Ga 1. Influences of Gallium on Microstructure and Mechanical Properties of Mg-x%Al-2%Ga Alloys; Ga对铸态Mg-x%Al-2%Ga镁合金显微组织和力学性能的影响 2. Preliminary Feasibility Study of Extracting Ga、Nb、Li and Sc from Bauxite Ore; 从铝土矿中提取Ga、Nb、Li、Sc的可行性初步研究 3. Effects of Ga on electrochemical properties of Al-Zn-In sacrificial anodes; Ga对Al-Zn-In合金牺牲阳极电化学性能影响 5) Ga-In-As Ga-In-As 1. THERMODYNAMICS OF Ga-In-As SYSTEM UNDER LATTICE DEFORMATION; 晶格形变情况下Ga－In－As体系热力学研究 6) GaAs Ga As 1. Interference of Electron in GaAs/AlGaAs Multiquantum Well Structure; Ga As/Al Ga As多量子阱结构中的电子干涉参考词条 Ga/HZSM-5 Pt-Ga ~（67）Ga GA-BP 富In（Ga） e-GA FP-GA 掺Ga Ga-ZSM-5 ~（71）Ga L-GA （67）~Ga GA-Simplex ~（68）Ga Ca2+-GA 混流式干燥机补充资料：gallium nitride GaN 分子式： CAS号：性质：白色或微黄色粉末。具有很高的化学稳定性，不溶于水，不与水和浓无机酸反应，稍与稀酸作用，缓慢与碱液反应，空气中加热800℃开始氧化，生成氧化镓。1050℃开始分解。可由气态生长细晶。在1050～1200℃由氧化镓和氨反应或由氯镓酸铵分解制取。为半导体材料和荧光粉。说明：补充资料仅用于学习参考，请勿用于其它任何用途。
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