GaN HEMTs,GaN HEMTs,在线英语词典,英文翻译,专业英语

1) GaN HEMTs

GaN HEMTs

Low Noise Distributed Amplifiers Using a Novel Composite-Channel GaN HEMTs;

一种采用新型复合沟道GaN HEMTs低噪声分布式放大器(英文)

2) AlGaN/GaN HEMTs

AlGaN/GaN HEMTs

Study on the X-Band Γ-Gate Field-Plate for AlGaN/GaN HEMTs;

X波段AlGaN/GaN HEMTs Γ栅场板结构研究(英文)

Performance Improvement of AlGaN/GaN HEMTs by Surface Treatment Prior to Si_3N_4 Passivation;

钝化前表面预处理对AlGaN/GaN HEMTs性能的影响

Study on X-Band AlGaN/GaN HEMTs with Γ-Gate Field-Plate;

X波段AlGaN/GaN HEMTs Γ栅场板结构研究

3) AlGaN/GaN HEMTs

AlGaN/GaN HEMT

AlGaN/GaN HEMTs Power Amplifier MIC with Powercombining at C-Band;

基于AlGaN/GaN HEMT的C波段功率放大器混合集成电路的设计

AlGaN/GaN HEMTs Power Amplifier MIC with Power Combining at C-Band;

基于AlGaN/GaN HEMT的C波段混合集成功率合成放大器的设计(英文)

Performance of AlGaN/GaN HEMTs with Different Layout;

AlGaN/GaN HEMTs器件布局对器件性能影响分析

4) AlGaN/GaN HEMTs

AlGaN/GaNHEMT

An X-band internally matched AlGaN/GaN HEMTs have been developed.

电路包含有四个AlGaN/GaNHEMT和制作在Al2O3陶瓷基片上的输入输出匹配电路。

5) HEMTs

高电子迁移率晶体管

A New Method for InGaAs/InP Composite Channel HEMTs Simulation;

一种InGaAs/InP复合沟道高电子迁移率晶体管模拟的新方法(英文)

6) HEMTs

HEMTs

Cascode Connected AlGaN/GaN Microwave HEMTs on Sapphire Substrates;

蓝宝石衬底AlGaN/GaN共栅共源微波HEMTs器件(英文)

AlGaN/GaN Microwave Cascode HEMTs;

AlGaN/GaN共栅共源HEMTs器件

Based on a comparison of the degree of drain current collapse in AlGaN/GaN HEMTs with and without an AlN insert layer under short-term DC bias stress,the effects of an AlN insert layer on current collapse induced by DC bias stress are investigated.

比较有无AlN插入层AlGaN/GaNHEMTs在直流偏置应力条件下的电流崩塌程度,研究AlN插入层对电流崩塌的影响。

参考词条

"Gan" gan gan GAN GaN Shao Gan Duo Gan GaN nanorods Gan River p-GaN GaN film GaN power GaN particles 齿轮热处理业务创新域

补充资料：gallium nitride GaN

分子式：
CAS号：

性质：白色或微黄色粉末。具有很高的化学稳定性，不溶于水，不与水和浓无机酸反应，稍与稀酸作用，缓慢与碱液反应，空气中加热800℃开始氧化，生成氧化镓。1050℃开始分解。可由气态生长细晶。在1050～1200℃由氧化镓和氨反应或由氯镓酸铵分解制取。为半导体材料和荧光粉。

说明：补充资料仅用于学习参考，请勿用于其它任何用途。

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1) GaN HEMTs GaN HEMTs 1. Low Noise Distributed Amplifiers Using a Novel Composite-Channel GaN HEMTs; 一种采用新型复合沟道GaN HEMTs低噪声分布式放大器(英文) 2) AlGaN/GaN HEMTs AlGaN/GaN HEMTs 1. Study on the X-Band Γ-Gate Field-Plate for AlGaN/GaN HEMTs; X波段AlGaN/GaN HEMTs Γ栅场板结构研究(英文) 2. Performance Improvement of AlGaN/GaN HEMTs by Surface Treatment Prior to Si_3N_4 Passivation; 钝化前表面预处理对AlGaN/GaN HEMTs性能的影响 3. Study on X-Band AlGaN/GaN HEMTs with Γ-Gate Field-Plate; X波段AlGaN/GaN HEMTs Γ栅场板结构研究 3) AlGaN/GaN HEMTs AlGaN/GaN HEMT 1. AlGaN/GaN HEMTs Power Amplifier MIC with Powercombining at C-Band; 基于AlGaN/GaN HEMT的C波段功率放大器混合集成电路的设计 2. AlGaN/GaN HEMTs Power Amplifier MIC with Power Combining at C-Band; 基于AlGaN/GaN HEMT的C波段混合集成功率合成放大器的设计(英文) 3. Performance of AlGaN/GaN HEMTs with Different Layout; AlGaN/GaN HEMTs器件布局对器件性能影响分析 4) AlGaN/GaN HEMTs AlGaN/GaNHEMT 1. An X-band internally matched AlGaN/GaN HEMTs have been developed. 电路包含有四个AlGaN/GaNHEMT和制作在Al2O3陶瓷基片上的输入输出匹配电路。 5) HEMTs 高电子迁移率晶体管 1. A New Method for InGaAs/InP Composite Channel HEMTs Simulation; 一种InGaAs/InP复合沟道高电子迁移率晶体管模拟的新方法(英文) 6) HEMTs HEMTs 1. Cascode Connected AlGaN/GaN Microwave HEMTs on Sapphire Substrates; 蓝宝石衬底AlGaN/GaN共栅共源微波HEMTs器件(英文) 2. AlGaN/GaN Microwave Cascode HEMTs; AlGaN/GaN共栅共源HEMTs器件 3. Based on a comparison of the degree of drain current collapse in AlGaN/GaN HEMTs with and without an AlN insert layer under short-term DC bias stress,the effects of an AlN insert layer on current collapse induced by DC bias stress are investigated. 比较有无AlN插入层AlGaN/GaNHEMTs在直流偏置应力条件下的电流崩塌程度,研究AlN插入层对电流崩塌的影响。参考词条 "Gan" gan gan GAN GaN Shao Gan Duo Gan GaN nanorods Gan River p-GaN GaN film GaN power GaN particles 齿轮热处理业务创新域补充资料：gallium nitride GaN 分子式： CAS号：性质：白色或微黄色粉末。具有很高的化学稳定性，不溶于水，不与水和浓无机酸反应，稍与稀酸作用，缓慢与碱液反应，空气中加热800℃开始氧化，生成氧化镓。1050℃开始分解。可由气态生长细晶。在1050～1200℃由氧化镓和氨反应或由氯镓酸铵分解制取。为半导体材料和荧光粉。说明：补充资料仅用于学习参考，请勿用于其它任何用途。
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