1.
Influence of Optical Phonons on the Electronic Mobility in a Strained Wurtzite AlN/GaN Heterojunction under Hydrostatic Pressure;
压力下光学声子对应变纤锌矿AlN/GaN异质结中电子迁移率的影响
2.
Super Cell Calculation of GaN/AlN Semiconductor Heterojunction Valence-band Offsets
GaN/AlN半导体异质结带阶超原胞法计算
3.
Influence of high-temperature AlN interlayer on the electrical properties of AlGaN/GaN heterostructure and HEMTs
高温AlN插入层对AlGaN/GaN异质结材料和HEMTs器件电学特性的影响
4.
AlGaN/GaN MIS-HEMT with Magnetron Sputtered AlN
磁控溅射AlN介质MIS栅结构的AlGaN/GaN HEMT
5.
14 W/mm AlGaN-GaN MIS-HEMTs with Magnetron Sputtered AlN Dielectric as Gate Insulator
磁控溅射AlN介质的14W/mm AlGaN/GaN MIS-HEMT
6.
The Surface Acoustic Wave Propagating Properties in AlN/GaN Structures;
声表面波在AlN/GaN结构中的传播特性
7.
Fabrication of n-ZnO/i-ZnO/p-GaN Heterostructure LEDs by PLD;
PLD方法制备n-ZnO/i-ZnO/p-GaN异质结LED
8.
The Characteristic Research of AlGaN/GaN Heterostructure Field Effect Transistors
AlGaN/GaN异质结场效应晶体管特性研究
9.
Characteristic of AlGaN/GaN Heterostructures and of High Electron Mobility Transistors
AlGaN/GaN异质结材料特性与HEMT器件研究
10.
AlGaN/GaN Heterostructure on Si(111) Substrate Grown by MOCVD
MOCVD生长AlGaN/GaN/Si(111)异质结材料
11.
Study on growth and characteristic of alInGaN/GaN heterostructures
AlInGaN/GaN异质结构材料生长及特性研究
12.
First-principles Study on the Half-metallic Properties of Cr、Mn Doped AlN and GaN
Cr、Mn掺杂AlN和GaN半金属性质的第一性原理研究
13.
Structure and Properties of AlN and Fe-doped AlN Films;
AlN和Fe掺杂AlN薄膜的结构与性质
14.
Spin Properties of the Two-Dimensional Electron Gas in Al_xGa_(1-x)N/GaN Heterostructures
Al_xGa_(1-x)N/GaN异质结构中二维电子气的自旋性质
15.
Stress Related Effects of GaN Based Semiconductor Heterostructures;
GaN基半导体异质结构中的应力相关效应
16.
Electron-Optical-Phonon Scattering Rate in a Strained GaN/Ga_xIn_(1-x)N Heterojunction;
GaN/Ga_xIn_（1-x）N应变异质结中电子—光学声子散射率
17.
Electron-optical-phonon Scattering Rate in a Strained GaN/GaxIn1-xN Heterojunction
应变对GaN/Ga_xIn_(1-x)N异质结中界面声子的影响
18.
Passivation,Field Plate and Heterostructure Design in GaN HFETs
GaN HFET研究中的钝化、场板和异质结构设计