1) Ge-dots/Si multilayered structure
Ge/Si量子点多层结构
2) Ge/Si quantum dots
Ge/Si量子点
3) SiGe quantum dots
Si Ge量子点
1.
A novel flash memory cell with stacked structure (Si substrate/SiGe quantum dots/tunneling oxide/poly-Si floating gate) is proposed and demonstrated to achieve enhanced F-N tunneling for both programming and erasing.
提出了一种用于半导体闪速存储器单元的新的Si/Si Ge量子点/隧穿氧化层/多晶硅栅多层结构,该结构可以实现增强F-N隧穿的编程和擦除机制。
4) Si-based Ge Quantum-dots
Si基Ge量子点
5) Si/Ge multilayer
Si/Ge多层膜
1.
Photoluminescence of Si/Ge multilayer films deposited by ion-beam sputtering;
溅射Si/Ge多层膜及其发光誊性研究
2.
The Si/Ge multilayers have been prepared by ion beam sputtering technique.
本文采用离子束外延技术制备了一系列的Si/Ge多层膜结构,对样品进行X射线和拉曼散射实验表征。
6) Ge/Si multilayer
Ge/Si多层膜
1.
Study on the Photoluminescence Properties of Ge/Si multilayer Films Deposited by Magnetron Sputtering;
磁控溅射Ge/Si多层膜的发光特性研究
补充资料：多量子阱(见量子阱)
多量子阱(见量子阱)
multiple quantum well
多t子阱multiple quanturn well见量子阱。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条