The study of SiC buffers used to improve the quality of GaN films on the Si substrate;

The influence of thermal annealing on the structural,electrical and optical properties of the gallium oxide thin film were investigated.

Microfabrication of silicon nitride film applied in microsensor;

The structure and the property of amorphous silicon nitride film formed by direct current-plasma chemical vapour deposition (DC-PCVD) were analyzed.

0eV laser excitation, six luminescence emission bands of LPCVD silicon nitride film were observed corresponding to 2.

A chromatic prediction model was developed by artificial neural network through analyzing the relationship between the technological parameters for ZrN thin film preparation and relevant chromatic parameters.

As a kind of mufti- functional materials, silicon nitride thin film is widely used in many fields.

In order to study preparation process and PL mechanism of silicon nitride thin films,the nc-Si(nanocrystalline Si)embedded in silicon nitride thin films were prepared by RF magnetron reaction sputtering technique and thermal annealing.

In the manufacture of microelectronic materials and devices, silicon nitride thin film is used as passivating film, insulation layer and diffusion mask.