1) BN film
氮化硼薄膜
1.
6 while deposited BN films,and the antifriction effect is obvious.
采用射频磁控溅射法在T10碳素工具钢表面制备了氮化硼薄膜;研究了在基材和薄膜之间化学镀N i-P中间层对薄膜结合力的影响;使用摩擦试验机对基材和镀膜后的试样进行了摩擦性能检测;通过划痕试验进行了结合强度试验。
2.
With optical microscope, friction and wear spectrometer and scratch spectrometer, the influence of the parameters of sputtering time, sputtering power and interface layer on the film was studied The results showed that the friction factor of BN film was about half of that of the steel based materials, and the cohesion between film and substrate could obviously be.
采用射频磁控溅射方法在T10钢表面获得了氮化硼薄膜。
3.
BN films, synthesized by ion beam assisted deposition, were analysed by RBS,AES, IR spectra and TEM.
用离子束辅助沉积(IBAD)技术合成氮化硼薄膜,红外吸收谱和透射电镜的观测结果显示,薄膜含有c—BN和h—BN相薄膜Knoop硬度值高达35GPa。
2) boron nitride thin film
氮化硼薄膜
1.
Amorphous boron nitride thin film was prepared on the titanium coated ceramic substrate by pulsed laser deposition technique (PLD).
利用脉冲激光沉积 (PLD)技术在镀钛的陶瓷衬底上制备出了非晶态氮化硼薄膜 ,借助于X射线衍射(XRD)、扫描电子显微镜 (SEM )及Raman光谱分析了该薄膜的结构 ,并研究了薄膜场致电子发射特性 ,阈值电场为4 6V μm ,当电场为 9V μm时 ,电流密度为 5 0 μA cm2 。
3) cubic boron nitride
立方氮化硼薄膜
1.
The materials known as diamond and related thin film materials include diamond films and cubic boron nitride thin films,and the method for preparing them are called the new technique of diamond.
金刚石及相关薄膜材料指的是金刚石薄膜和立方氮化硼薄膜,它们的制备技术被称为“新金刚石技术”。
2.
Studying the characteristics of the surface of the cubic boron nitride (cBN) thin films is very important to making clear its formation mechanism and application.
研究立方氮化硼薄膜表面的性质对于研究立方氮化硼薄膜的成核机理和应用,具有重要的价值。
4) c-BN films
立方氮化硼薄膜
1.
The characterization of c-BN films was car- ried out by XRD,FTIR spectroscopy.
同时研究了各个沉积参数(基底直流负偏压、弧光等离子体放电电流、气体流量比)对立方氮化硼薄膜制备的影响。
2.
Then the preliminary results for preparing c-BN films in Si wafer are presented, the films prepared by different assisted ion source were analyzed by infrared spectroscopy and X-ray photoelectron spectroscopy.
为选出合适的辅助离子源进行沉积制备c-BN薄膜,通过对高能和低能辅助镀膜离子源的重要性能进行比较研究之后,在单晶Si基体进行应用制备立方氮化硼薄膜,用红外光谱(FTIR)及光电子能谱(XPS)分析技术,对不同辅助离子源制备沉积的薄膜,进行比较表征,得出结论:低能辅助镀膜离子源,比高能辅助镀膜离子源更适用于制备立方氮化硼薄膜。
5) cubic boron nitride thin film
立方氮化硼薄膜
1.
Controlling the interfacial structure of cubic boron nitride thin film prepared by plasma-enhanced chemical vapor deposition;
立方氮化硼薄膜生长过程中的界面控制
2.
Surface growth mechanism of cubic boron nitride thin films prepared by plasma-enhanced chemical vapor deposition;
等离子体增强化学气相沉积法制备立方氮化硼薄膜过程中的表面生长机理
补充资料：氮化硼纤维增强体(见氮化硼纤维)
氮化硼纤维增强体(见氮化硼纤维)
boron nitride fibre reinforcements
然1‘珊升莱增强体boronments以氮化硼为主要成分，njtride fibre reinforce-用作陶瓷基、今星其有合材料增强体的一种无机纤维(见氮化硼纤维)。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条