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1)  LiNbO3/SiO2/Si film
LiNbO3/SiO2/Si薄膜
1.
LiNbO3/SiO2/Si films were prepared by radio-frequency(RF) magnetron sputtering technique.
采用射频磁控溅射方法制备了LiNbO3/SiO2/Si薄膜。
2)  Si-SiO 2 thin film
Si-SiO2薄膜
3)  Si-rich silica films
富Si-SiO2薄膜
4)  nano-size Si/SiO2 film
Si/SiO2纳米薄膜
1.
The I-V properties of nano-size Si/SiO2 films are tested.
用射频磁控溅射法制备了3种结构的Si/SiO2纳米薄膜,测定了薄膜的I-V特性。
5)  LiNbO3 films
LiNbO3薄膜
1.
RF-sputter deposited c-oriented LiNbO3 films on Si substrates are the basis for fabricating waveguides and integrated devices.
利用射频磁控溅射法在硅衬底上生长c轴取向LiNbO3薄膜。
6)  Si/SiO2 multi-layer films
Si/SiO2多层膜
1.
Si/SiO2 multi-layer films are fabricated using the RF magnetron sputtering technique, and the I-V properties of the multi-layer films are analyzed.
用射频磁控溅射法制备了Si/SiO2多层膜,并对多层膜的I-V特性实验结果进行了拟合。
补充资料：acetic acid, dianhydride with silicic acid (h4sio4) bis(1,1-dimethylethyl) este
CAS：13170-23-5
分子式：C12H24O6Si
分子质量：292.40
沸点：102℃(5 t
中文名称：二叔丁氧二乙酰氧基硅
英文名称：Acetic acid, dianhydride with silicic acid bis(1,1-dimethylethyl) ester
di-tert-Butoxydiacetoxysilane
di(tert-butoxy)diacetoxy-Silane
acetic acid, dianhydride with silicic acid (h4sio4) bis(1,1-dimethylethyl) este
di-t-butoxydiacetoxysilane
Acetic acid,dianhydride with silicic acid bis(1,1-dimethylethyl)ester
Silane,di(tert-butoxy)diacetoxy-
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
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