1) SiO2/Si3N4 films
SiO2/Si3N4薄膜
2) SiO2/Si3N4 double layers
SiO2/Si3N4双层膜
1.
Different charging temperatures,time and other factors were investigated for improving performance of PECVD prepared SiO2/Si3N4 double layers electrets.
本文研究了在带有Cr/Au电极的玻璃衬底上利用PECVD制备的SiO2/Si3N4双层膜驻极体性能。
3) Si_3N_4 film
Si3N4薄膜
1.
The influence of deposition rate of Si_3N_4 film on storage time of MOS capacitor exists because of its tensile stress,which can be reduced by annealing.
Si3N4薄膜淀积速率对MOS电容器存储时间影响很大。
4) SiO_2 film
SiO2薄膜
1.
The SiO_2 films at various O_2/Ar flow ratios were prepared by reactive d.
在不同氧氩比例气氛下,采用反应直流磁控溅射方法制备了SiO2薄膜。
2.
0 nm thick SiO_2 film,by vacuum deposition.
0 nm厚SiO2薄膜。
3.
The stability of charge storage of the SiO_2 film electret is improved by the plasma surface treatment of the thermal grown SiO_2 film on the Si substrate.
利用等离子体对硅衬底上热生长SiO2薄膜进行表面处理,提高了二氧化硅薄膜驻极体电荷的储存稳定性。
5) ZrO2/SiO2 film
ZrO2/SiO2薄膜
6) TiO2-SiO2 thin film
TiO2-SiO2薄膜
1.
TiO2-SiO2 thin films were prepared on slide glass substrates by sol-gel method.
当SiO2添加量为30%时,在紫外光照1h时TiO2-SiO2薄膜的光催化活性最佳。
补充资料：acetic acid, dianhydride with silicic acid (h4sio4) bis(1,1-dimethylethyl) este
CAS：13170-23-5
分子式：C12H24O6Si
分子质量：292.40
沸点：102℃(5 t
中文名称：二叔丁氧二乙酰氧基硅
英文名称：Acetic acid, dianhydride with silicic acid bis(1,1-dimethylethyl) ester
di-tert-Butoxydiacetoxysilane
di(tert-butoxy)diacetoxy-Silane
acetic acid, dianhydride with silicic acid (h4sio4) bis(1,1-dimethylethyl) este
di-t-butoxydiacetoxysilane
Acetic acid,dianhydride with silicic acid bis(1,1-dimethylethyl)ester
Silane,di(tert-butoxy)diacetoxy-
分子式：C12H24O6Si
分子质量：292.40
沸点：102℃(5 t
中文名称：二叔丁氧二乙酰氧基硅
英文名称：Acetic acid, dianhydride with silicic acid bis(1,1-dimethylethyl) ester
di-tert-Butoxydiacetoxysilane
di(tert-butoxy)diacetoxy-Silane
acetic acid, dianhydride with silicic acid (h4sio4) bis(1,1-dimethylethyl) este
di-t-butoxydiacetoxysilane
Acetic acid,dianhydride with silicic acid bis(1,1-dimethylethyl)ester
Silane,di(tert-butoxy)diacetoxy-
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条