1) Ge/SiO_2 film
Ge/SiO2薄膜
1.
Ge/SiO_2 film is deposited on p-Si(100)substrate by two-target alternation RF magnetron sputtering technique.
用射频磁控溅射双靶交替淀积的方法在p-Si(100)衬底上制备了Ge/SiO2薄膜,利用Au/Ge/SiO2/p-Si结构的I-V特性曲线研究了该结构的电流输运机制。
2) Ge-SiO 2 thin film
Ge-SiO2薄膜
3) Al-Ge-SiO_2 thin film
Al-Ge-SiO2薄膜
4) Ge film
Ge薄膜
1.
Influence of Ar~+ energy on the crystalline property of Ge films fabricated by ion beam sputtering;
溅射Ar~+能量对离子束溅射制备Ge薄膜结晶性的影响
2.
The Ge films were grown by chemical vapor deposition(CVD),with GeH4 as the source of reactive gas,on GaN/Al2O3(0001)composite substrates.
本工作采用化学气相淀积方法,以GeH4为反应气源,以InN/GaN/Al2O3(0001)复合衬底作陪片,在GaN/Al2O3(0001)复合衬底上外延生长了Ge薄膜,并对生长机理进行了探讨。
5) Si/Ge Films
Si/Ge薄膜
6) Ge-SiO_2 thin films
Ge-SiO_2薄膜
1.
Ge-SiO_2 thin films were prepared by a RF co-sputtering technique on p-Si substrates.
用射频磁控溅射制备了Ge-SiO_2薄膜。
补充资料：acetic acid, dianhydride with silicic acid (h4sio4) bis(1,1-dimethylethyl) este
CAS：13170-23-5
分子式：C12H24O6Si
分子质量：292.40
沸点：102℃(5 t
中文名称：二叔丁氧二乙酰氧基硅
英文名称：Acetic acid, dianhydride with silicic acid bis(1,1-dimethylethyl) ester
di-tert-Butoxydiacetoxysilane
di(tert-butoxy)diacetoxy-Silane
acetic acid, dianhydride with silicic acid (h4sio4) bis(1,1-dimethylethyl) este
di-t-butoxydiacetoxysilane
Acetic acid,dianhydride with silicic acid bis(1,1-dimethylethyl)ester
Silane,di(tert-butoxy)diacetoxy-
分子式：C12H24O6Si
分子质量：292.40
沸点：102℃(5 t
中文名称：二叔丁氧二乙酰氧基硅
英文名称：Acetic acid, dianhydride with silicic acid bis(1,1-dimethylethyl) ester
di-tert-Butoxydiacetoxysilane
di(tert-butoxy)diacetoxy-Silane
acetic acid, dianhydride with silicic acid (h4sio4) bis(1,1-dimethylethyl) este
di-t-butoxydiacetoxysilane
Acetic acid,dianhydride with silicic acid bis(1,1-dimethylethyl)ester
Silane,di(tert-butoxy)diacetoxy-
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条