1) mid-frequency pulsed magnetron sputtering
中频脉冲磁控溅射
1.
Using a 2% Al-doped Zn target,ZnO∶Al(ZAO)thin films were deposited on a glass substrate by mid-frequency pulsed magnetron sputtering.
利用中频脉冲磁控溅射方法,以掺杂质量2%Al的Zn(纯度99。
2.
Using a Zn target with 2wt% Al, ZnO:Al(ZAO)thin films which were used on silicon thin film solar cells were deposited on glass substrate by mid-frequency pulsed magnetron sputtering.
本文利用中频脉冲磁控溅射技术,以掺杂Al 2wt%的Zn:Al合金靶为靶材,研究了用于硅薄膜太阳电池的ZnO:Al(ZAO)透明导电薄膜,主要完成了以下几方面的工作: 1、本实验使用的是美国AE公司的中频脉冲电源,采用中频脉冲磁控溅射的方法,首先在玻璃衬底上制备平面透明导电薄膜。
3.
Using a Zn target with 2wt% Al, ZnO:A(lZAO)thin films which were used on silicon thin film solar cells were deposited on glass substrate by mid-frequency pulsed magnetron sputtering.
本文利用中频脉冲磁控溅射方法,以掺杂Al 2wt%的Zn:Al合金靶为靶材,制备了用于硅薄膜太阳电池的绒面ZAO透明导电薄膜。
2) mid-frequency pulse magnetron sputtering
中频脉冲磁控溅射
1.
In this work, the performance of ZnO:Al(ZAO) film prepared by mid-frequency pulse magnetron sputtering was studied as follows:Zn metal target with 2wt% Al doped was used in the experiment.
本文利用中频脉冲磁控溅射系统研究了应用于硅薄膜太阳能电池上的铝掺杂的氧化锌(ZAO)透明导电薄膜的制备和性能,主要内容如下: 利用掺Al 2wt%的Zn:Al合金靶,通过变换工艺参数,研究了溅射功率、氧分压、工作压力以及衬底温度对ZAO薄膜电学、光学以及结构性能的影响,在实验和分析的基础上确定了最优工艺条件即:本底真空4。
3) Pulse magnetron sputtering
脉冲磁控溅射
1.
The titania film deposited on cenosphere particles by pulse magnetron sputtering deposition was studied.
采用脉冲磁控溅射方法,开展了在空心微珠表面镀二氧化钛薄膜的研究。
4) medium frequency magnetron sputtering
中频磁控溅射
1.
Al containing diamond-like carbon(Al-DLC) thin films were deposited on Si substrate by medium frequency magnetron sputtering.
采用中频磁控溅射技术在单晶硅表面制备含铝类金刚石(Al-DLC)薄膜,利用原子力显微镜、X射线光电子能谱仪、红外光谱仪、纳米压痕仪和微摩擦磨损试验机等考察薄膜表面形貌、结构及其摩擦磨损性能。
2.
Er~(3+)_- doped Al_2O_3 films were fabricated by medium frequency magnetron sputtering, strong photoluminescence at 1535 nm was detected at the room temperature.
利用中频磁控溅射方法沉积制备了掺铒Al2O3薄膜,室温下测量了薄膜在1535nm波长处的光致发光光谱和抽运功率、掺铒浓度、退火温度对光致发光光谱强度的影响。
3.
This thesis presents investigations on the structure and properties of A1N films and nc-AlN/a-Si3N4 prepared by medium frequency magnetron sputtering.
本工作研究了中频磁控溅射制备AIN薄膜和nc-AIN／a-Si_3N_4复合薄膜及其结构与特性，并且研究了Mn~+离子注入AIN薄膜的电学和磁学性质。
5) medium-frequency magnetron sputtering
中频磁控溅射
1.
The complex deposited process which fitted medium-frequency magnetron sputtering together with multi-arc ion plating,was utilized to prepare the MoS2 /Zr composite coating on the surface of cemented carbides YT14.
采用新型中频磁控溅射技术及多弧离子镀相结合的复合镀膜工艺,在硬质合金YT14基体上制备了MoS2/Zr复合薄膜。
6) mid-frequency magnetron sputtering
中频磁控溅射
1.
Using a Zn target with 2% Al,ZnO:Al(ZAO) thin films were deposited on glass substrate by mid-frequency magnetron sputtering.
采用中频磁控溅射工艺,以2%的Al掺杂的Zn(纯度99。
2.
Diamond-like carbon (DLC) thin films were deposited onto Si (100) and high speed steel substrates by mid-frequency magnetron sputtering system (SP0806AS,Beijing Power tech Co.
采用SP0806AS中频磁控溅射镀膜机,在硅(100)和高速钢基体上,采用双石墨靶在不同功率下沉积了类金刚石薄膜。
补充资料：磁控溅射
分子式：
CAS号：
性质：用一个环形永久磁体在乎板形靶上产生环形磁场，在磁场作用下，电子被约束在一个环状空间内，形成高密度的等离子环。在等离子环内，电子不断地使Ar原子变成Ar离子，Ar离子被加速后打向靶表面，把靶内的原子溅射出来，沉积在基片上形成薄膜。若靶材为导体，溅射电源可用直流或射频电源，如靶材是绝缘体，则必须用射频电源。用多源共溅射加后处理法可制备双面薄膜。将基片放置在靶中心线上，称为正轴溅射，基片放在靶轴线外；称为偏轴溅射。磁控溅射是广泛采用的制膜方法。
CAS号：
性质：用一个环形永久磁体在乎板形靶上产生环形磁场，在磁场作用下，电子被约束在一个环状空间内，形成高密度的等离子环。在等离子环内，电子不断地使Ar原子变成Ar离子，Ar离子被加速后打向靶表面，把靶内的原子溅射出来，沉积在基片上形成薄膜。若靶材为导体，溅射电源可用直流或射频电源，如靶材是绝缘体，则必须用射频电源。用多源共溅射加后处理法可制备双面薄膜。将基片放置在靶中心线上，称为正轴溅射，基片放在靶轴线外；称为偏轴溅射。磁控溅射是广泛采用的制膜方法。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条