1) Mid-frequency direct current magnetron sputtering
中频直流反应磁控溅射
2) mid-frequency alternative reactive magnetron sputtering
中频交流反应磁控溅射
1.
N-doped TiO2 films were prepared by mid-frequency alternative reactive magnetron sputtering.
用中频交流反应磁控溅射方法制备了N掺杂的TiO2薄膜。
3) DC reactive magnetron sputtering
直流反应磁控溅射
1.
Influence of substrate-to-target distance on optical property of TiO_2 thin film prepared by DC reactive magnetron sputtering;
靶基距对直流反应磁控溅射制备TiO_2薄膜光学性质的影响
2.
TiO_2 thin films were deposited on ITO, which has been deposited on quartz substrate, by way of DC reactive magnetron sputtering.
采用直流反应磁控溅射的方法,溅射高纯钛靶在ITO石英衬底上制备了TiO2薄膜。
3.
N-doped ZnO thin films were prepared on glass substrates by DC reactive magnetron sputtering using a pure zinc disk as target and Ar-N2-O2 mixture as sputtering gas.
利用直流反应磁控溅射法(纯金属锌作为靶材,Ar-N2-O2混合气体作为溅射气体)在石英玻璃衬底上制备了N掺杂p型ZnO薄膜。
4) reactive d.c.magnetron sputtering
反应直流磁控溅射
1.
The SiO_2 films at various O_2/Ar flow ratios were prepared by reactive d.
在不同氧氩比例气氛下,采用反应直流磁控溅射方法制备了SiO2薄膜。
5) dc reactive magnetron sputtering
直流反应磁控溅射法
1.
CdIn2O4(CIO) thin films were grown by DC reactive magnetron sputtering.
利用直流反应磁控溅射法制备了CdIn2O4(CIO)薄膜,研究了氧浓度、基片温度、溅射时间和退火处理对薄膜光电性能的影响。
2.
A novel type of transparent conductive oxide thin film of molybdenum-doped indium oxide(IMO) was prepared by DC reactive magnetron sputtering at room temperature.
在室温条件下采用直流反应磁控溅射法制备了新型透明导电In2O3∶Mo薄膜。
6) DC magnetron reactive sputtering
直流磁控反应溅射
1.
AlN thin films for high temperature pressure sensor were successfully deposited by DC magnetron reactive sputtering.
采用直流磁控反应溅射法制备了高温压力传感器用的AlN薄膜。
2.
Aluminum nitride (AlN) thin films have been successfully deposited on Si(100) and Pt/Ti/Si(100) byDC magnetron reactive sputtering.
采用直流磁控反应溅射法,在Si(100)和Pt/Ti/Si(100)上制备了具有较好(002)择优取向性的AlN薄膜。
3.
Aluminum nitride (AlN) thin films have been successfully deposited on Si(100) and Pt/Ti/Si(100) by DC magnetron reactive sputtering.
采用直流磁控反应溅射法,在Si(100)和Pt/Ti/Si(100)上制备了AlN薄膜。
补充资料：磁控溅射
分子式：
CAS号：
性质：用一个环形永久磁体在乎板形靶上产生环形磁场，在磁场作用下，电子被约束在一个环状空间内，形成高密度的等离子环。在等离子环内，电子不断地使Ar原子变成Ar离子，Ar离子被加速后打向靶表面，把靶内的原子溅射出来，沉积在基片上形成薄膜。若靶材为导体，溅射电源可用直流或射频电源，如靶材是绝缘体，则必须用射频电源。用多源共溅射加后处理法可制备双面薄膜。将基片放置在靶中心线上，称为正轴溅射，基片放在靶轴线外；称为偏轴溅射。磁控溅射是广泛采用的制膜方法。
CAS号：
性质：用一个环形永久磁体在乎板形靶上产生环形磁场，在磁场作用下，电子被约束在一个环状空间内，形成高密度的等离子环。在等离子环内，电子不断地使Ar原子变成Ar离子，Ar离子被加速后打向靶表面，把靶内的原子溅射出来，沉积在基片上形成薄膜。若靶材为导体，溅射电源可用直流或射频电源，如靶材是绝缘体，则必须用射频电源。用多源共溅射加后处理法可制备双面薄膜。将基片放置在靶中心线上，称为正轴溅射，基片放在靶轴线外；称为偏轴溅射。磁控溅射是广泛采用的制膜方法。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条